Phase Transition and Thermoelectric Performance of NixCu12−xSb4Se13

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Sang Jun Park, Il-Ho Kim
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引用次数: 0

Abstract

Ternary compounds of the Cu–X–Q system (where X = Fe, Sb, Sn and Q = S, Se), such as Cu5FeS4, Cu3SbS4, and Cu2SnSe3, have garnered considerable attention for their potential applications in electronics, optics, and energy technologies. These compounds are noted for their low thermal conductivity and narrow band gaps, making them promising candidates for thermoelectric materials. However, detailed experimental investigations into the phase transitions and thermoelectric properties of synthetic hakite, particularly with Ni substitution, have been limited. This study focused on synthesizing Ni-substituted hakite (NixCu12−xSb4Se13; x = 0.5–2) through mechanical alloying and hot pressing techniques, while also exploring the phase transitions and thermoelectric characteristics as a function of Ni content. Despite the charge compensation effect of Ni, a pure hakite phase could not be achieved. Instead, the resultant phases comprised mixtures of secondary phases including bytizite, pribramite, and permingeatite, or their composites. This indicates that the introduction of Ni into the system did not promote the formation of a single-phase hakite but rather stabilized a multi-phase system. The introduction of Ni resulted in a decrease in electrical conductivity across all specimens. Notably, the materials exhibited non-degenerate semiconductor behavior. The measured Seebeck coefficients were significantly high and positive, confirming p-type behavior. However, these coefficients decreased with increasing temperature. The thermal conductivity of the materials displayed minimal temperature dependence, consistently remaining below 0.65 Wm−1 K−1. This low thermal conductivity is advantageous for thermoelectric efficiency, as it minimizes heat loss while maintaining charge transport. For the composition Ni0.5Cu11.5Sb4Se13, we achieved a maximum power factor of 0.09 mWm−1 K−2 and a peak dimensionless figure of merit (ZT) of 0.18 at 623 K.

Graphical Abstract

NixCu12−xSb4Se13的相变与热电性能
Cu-X-Q体系的三元化合物(其中X = Fe, Sb, Sn和Q = S, Se),如Cu5FeS4, Cu3SbS4和Cu2SnSe3,因其在电子,光学和能源技术中的潜在应用而引起了相当大的关注。这些化合物以其低导热性和窄带隙而闻名,使它们成为热电材料的有希望的候选者。然而,对合成哈基特的相变和热电性能的详细实验研究,特别是对Ni取代的研究,是有限的。本文主要研究了ni取代哈基特(NixCu12−xSb4Se13;x = 0.5-2)通过机械合金化和热压技术,同时也探索相变和热电特性作为Ni含量的函数。尽管有Ni的电荷补偿作用,但不能得到纯哈基特相。相反,生成的相由次生相的混合物组成,包括长石、绢云母和透辉岩,或它们的复合物。这表明Ni的引入并没有促进单相hakite的形成,而是稳定了多相体系。Ni的引入导致所有样品的导电性降低。值得注意的是,材料表现出非简并半导体行为。测得的塞贝克系数显著高且为正,证实了p型行为。随着温度的升高,这些系数逐渐减小。材料的热导率表现出最小的温度依赖性,始终保持在0.65 Wm−1 K−1以下。这种低导热系数有利于热电效率,因为它在保持电荷传输的同时最大限度地减少了热损失。对于Ni0.5Cu11.5Sb4Se13,我们在623 K时获得了0.09 mWm−1 K−2的最大功率因数和0.18的峰值无量纲品质系数(ZT)。图形抽象
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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