Enhancement Mode in ZnSnO Thin-Film Transistors with Ultrathin Al2O3 Contact Layer

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2025-02-25 DOI:10.1007/s13391-025-00554-y

Zihan Wang, Jiaqi Zhang, Ruqi Yang, Dunan Hu, Zhizhen Ye, Jianguo Lu

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引用次数: 0

Abstract

ZnSnO-based thin-film transistor (TFT) is considered to be the most competitive candidate for next-generation displays and transparent electronics. However, ZnSnO TFTs usually work in depletion mode with a negative voltage. In this work, we designed a structure of ZnSnO/Al₂O₃ TFTs with ultrathin Al₂O₃ contact layers. As the thickness of tunnel layer increases, the threshold voltages of TFTs increase at first and then decrease. When the growth cycle of Al₂O₃ layer reaches 17 (with thickness of ∼ 2 nm), the TFT has a positive threshold voltage of 2.3 V, as well as the best performances with an on-to-off current ratio of ∼ 10⁶, a saturation mobility of 23.5 cm²V^− 1s^− 1, and a small subthreshold swing of 0.57 V/decade. In this study, for the first time we propose an ultrathin contact method to modify the threshold voltage of amorphous oxide semiconductor (AOS) TFTs to get the enhancement mode without sacrificing mobility. It is expected that the method may open the door for practical applications of ZnSnO-based AOS TFTs.

Graphical Abstract

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超薄Al2O3接触层ZnSnO薄膜晶体管的增强模式

基于znsno的薄膜晶体管（TFT）被认为是下一代显示和透明电子产品中最具竞争力的候选者。然而，ZnSnO TFTs通常工作在负电压的耗尽模式下。在这项工作中，我们设计了一种具有超薄Al2O3接触层的ZnSnO/Al2O3 tft结构。随着隧道层厚度的增加，tft的阈值电压先升高后降低。当Al2O3层的生长周期达到17（厚度为~ 2 nm）时，TFT的正阈值电压为2.3 V，开关电流比为~ 106，饱和迁移率为23.5 cm2V−1s−1，亚阈值摆幅较小，为0.57 V/ 10年，性能最佳。在这项研究中，我们首次提出了一种超薄接触方法来修改非晶氧化物半导体（AOS） tft的阈值电压，以获得不牺牲迁移率的增强模式。该方法有望为znsno基AOS tft的实际应用打开大门。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.