3D Integrated Process and Hybrid Bonding of High Bandwidth Memory (HBM)

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2025-03-02 DOI:10.1007/s13391-025-00557-9

Chae Yeon Lee, Chae Ho Won, Seyeon Jung, Eun Su Jung, Tae Min Choi, Hwa Rim Lee, JinUk Yoo, Songhun Yoon, Sung Gyu Pyo

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引用次数: 0

Abstract

This review paper systematically analyzes the recent advancements in semiconductor packaging technology, focusing on hybrid bonding technology. Hybrid bonding is a crucial technique for enhancing integration density and thermal management in high-performance semiconductor devices by directly bonding metal to an insulator. It is categorized into wafer-to-wafer (W2W), die-to-wafer (D2W), and die-to-die (D2D) methods.

This paper compares the characteristics, advantages, and limitations of each method while presenting technical approaches for performance improvements. Innovations such as new dielectric materials, surface and interface modifications, and optimizing the crystallinity and crystal orientation of metals can significantly enhance the reliability and performance of hybrid bonding. These strategies boost data transfer rates between memory and processors while reducing power consumption and improving overall system performance. This latest research on maximizing hybrid bonding performance is also discussed, emphasizing its potential in the next generation of memory technologies, including high bandwidth memory. This research lays a critical foundation for further advancements in high-performance 3D integrated circuit technology.

Graphical Abstract

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高带宽存储器（HBM）的三维集成工艺与混合键合

本文系统分析了半导体封装技术的最新进展，重点介绍了混合键合技术。在高性能半导体器件中，混合键合是一种通过直接将金属键合到绝缘体上来提高集成密度和热管理的关键技术。它分为晶圆到晶圆（W2W）、晶圆到晶圆（D2W）和晶圆到晶圆（D2D）方法。本文比较了每种方法的特点、优点和局限性，同时提出了改进性能的技术方法。新型介电材料、表面和界面改性以及优化金属的结晶度和晶体取向等创新可以显著提高杂化键合的可靠性和性能。这些策略提高了内存和处理器之间的数据传输速率，同时降低了功耗并提高了整体系统性能。本文还讨论了最大化混合键合性能的最新研究，强调了其在下一代存储技术（包括高带宽存储）中的潜力。该研究为高性能3D集成电路技术的进一步发展奠定了重要的基础。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.