Jeong-In Lee, Baeksang Sung, Joo Won Han, Yong Hyun Kim, Jonghee Lee, Min-Hoi Kim
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Hydroxyethyl Cellulose Charge Trap Layer for Water-Degradable Short-Term Transistor Memory
This study demonstrates the performance of a hydroxyethyl cellulose (HEC) charge trap layer for p-type organic thin-film transistor memory. The HEC charge trap transistor memory (HEC-TM) shows conventional charge trapping characteristics; that is, positive and negative threshold voltage (Vth) shifts after the application of a positive and negative bias, respectively. As the time and amplitude of the gate bias increases, Vth shift increases gradually and saturates. Because the electron trap is relatively more dominant than the hole trap in the hydroxyl group of HEC, a larger shift in Vth and longer memory retention appears when a positive voltage is applied rather than a negative voltage. HEC-TM is immersed and the HEC charge trap layer (HEC-CTL) is dissolved sufficiently with deionized water to validate its water degradability. HEC-TM is expected to be utilized as a biodegradable short-term transistor memory device.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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