IEEE Transactions on Device and Materials Reliability最新文献_第9页

4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability 具有双源沟槽的4H-SiC沟槽栅横向MOSFET，可提高性能和可靠性

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-11-16 DOI: 10.1109/TDMR.2022.3222909

Hengyu Wang;Baozhu Wang;Lingxu Kong;Li Liu;Hu Chen;Teng Long;Florin Udrea;Kuang Sheng

{"title":"4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability","authors":"Hengyu Wang;Baozhu Wang;Lingxu Kong;Li Liu;Hu Chen;Teng Long;Florin Udrea;Kuang Sheng","doi":"10.1109/TDMR.2022.3222909","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3222909","url":null,"abstract":"The SiC trench gate lateral MOSFET featuring dual source trenches is proposed in this work. 2D numerical simulations by TCAD are conducted to study the performance and the reliability of the proposed structure and the conventional ones. With the trench gate, the device specific ON-resistance is reduced by more than 50% compared to that of the planar gate device. The device with proposed dual source trenches can also prevent the Pwell punch through problem that occurs in conventional lateral LMOS. As a result, a blocking voltage over 1200V can be achieved with the proposed structure. The proposed devices have two types of configurations. Compared with the configuration of double shallow trenches, the configuration of deep and shallow trenches can mitigate the curvature effect near the P+ source region by increasing the effective curvature radius. As a result, the RESURF doping and epi thickness windows are both expanded by \u0000<inline-formula> <tex-math>$1.5{times }$ </tex-math></inline-formula>\u0000. Furthermore, as the deep source trenches push the electric field away from the gate trench, the off-state oxide field is effectively reduced to below 3MV/cm. Thus, the long-term reliability is substantially improved. In addition, the deep and shallow source trench configuration provides the enhanced screen effect and hence lowers the gate charge by 50%. Faster switching can be achieved with this structure.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 1","pages":"2-8"},"PeriodicalIF":2.0,"publicationDate":"2022-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3492770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM 基于gnrfet的可靠低漏9T SRAM优化技术

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-11-14 DOI: 10.1109/TDMR.2022.3221806

Pramod Kumar Patel;Manzar Malik;Tarun Kumar Gupta

{"title":"Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM","authors":"Pramod Kumar Patel;Manzar Malik;Tarun Kumar Gupta","doi":"10.1109/TDMR.2022.3221806","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3221806","url":null,"abstract":"We present a low-leakage graphene nano-ribbon transistors (GNRFETs)-based static random access memory (SRAM) cell in 16nm technology that operates near the sub-threshold region in this study. In comparison to conventional Si-CMOS technology, the proposed cell improves read stability and writeability by \u0000<inline-formula> <tex-math>$2.67mathbf {times }$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$4.14mathbf {times }$ </tex-math></inline-formula>\u0000, respectively. The proposed cell considerably outperforms the existing 9T SRAMs cell in terms of power consumption, latency, read stability, and write-ability, according to the HSPICE simulation. In addition, at the low supply voltage of 325mV, the multi-threshold approach and transistor optimizations are used to improve the read static noise margin (RSNM). The proposed cell’s overall power consumption is lowered by \u0000<inline-formula> <tex-math>$4161mathbf {times }$ </tex-math></inline-formula>\u0000 when compared to a conventional 6T SRAM cell while using the multi-threshold approach in the write port. Device optimization and the multi-threshold approach, which enhances read and write performance, can considerably minimize read and write delays.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 4","pages":"506-516"},"PeriodicalIF":2.0,"publicationDate":"2022-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN 块状氮化铝表面声波器件的辐照诱导降解

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-10-11 DOI: 10.1109/TDMR.2022.3212050

B. LaRiviere;P. Ramuhalli;F. K. Reed;P. C. Joshi;M. N. Ericson;T. Aytug;M. L. Crespillo;S. J. Zinkle;W. J. Weber;E. Zarkadoula

{"title":"Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN","authors":"B. LaRiviere;P. Ramuhalli;F. K. Reed;P. C. Joshi;M. N. Ericson;T. Aytug;M. L. Crespillo;S. J. Zinkle;W. J. Weber;E. Zarkadoula","doi":"10.1109/TDMR.2022.3212050","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3212050","url":null,"abstract":"Here, recent work to evaluate the prospects for surface acoustic wave (SAW) devices fabricated on bulk aluminum nitride (AlN) for elevated temperature and radiation environments is reported and discussed. The design and fabrication of an array of SAW devices using commercial wafers is described, including the non-standard fabrication approach taken to overcome the stress-induced warpage of the 50 mm diameter AlN substrates. Radio frequency performance characterization of the SAW devices, with resonance frequencies ranging from 0.5 GHz to 1.5 GHz, is described. The linear temperature coefficient of frequency (TCF) near room temperature was measured and is compared to theoretical results from other investigators. The effects of 8 MeV Al ion irradiation at 300°C and 500°C to damage levels of 0.01, 0.1 and 1 displacements per atom (dpa), as a proxy for neutron irradiation, was investigated. The ion irradiation damage was observed to decrease the SAW resonant frequency, and this effect is characterized and discussed. Significant degradation in the conductivity of the Ti/Al electrodes of the SAW devices was also observed and characterized. These experimental results provide a basis for further investigation of the prospects for development of SAW sensor devices in bulk AlN material for application in elevated temperature and radiation environments.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 4","pages":"493-499"},"PeriodicalIF":2.0,"publicationDate":"2022-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3492989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance STATE:一种快速、可靠地预测阻性RAM寿命的测试结构

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-10-10 DOI: 10.1109/TDMR.2022.3213191

H. Aziza;J. Postel-Pellerin;M. Moreau

引用次数: 2

Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling LED光学外壳材料中硅酮的水分依赖降解率- ab - initio模型

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-27 DOI: 10.1109/TDMR.2022.3209710

Abdul Shabir;Cher Ming Tan

{"title":"Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling","authors":"Abdul Shabir;Cher Ming Tan","doi":"10.1109/TDMR.2022.3209710","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3209710","url":null,"abstract":"Degradation of LED housings which make up of polydimethylsiloxanes (PDMS) in outdoor applications has been one of the rising concerns as they reduce the overall lifetime of the LED leading to cost and safety issues. The primary stressors for such LED degradation were found to be humidity and light emitted from the LED dice. The degradation mechanisms are hydrolysis and condensation of PDMS which themselves are interdependent. The degradation rate was also found to be dependent on the humidity level. This work identifies these dependencies, using ab-initio density functional theory and molecular dynamics simulation, and the results agree with the reported experimental data. From the detail understanding of the degradation mechanisms and the identification of the rate determining factors which are moisture level and the level of light absorption in PDMS, acceleration models commonly used for extrapolation are questioned, and new quality indexes of the PDMS are also identified to ensure the durability of LEDs in outdoor applications. Testing method to evaluate these new quality indexes is also proposed.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 4","pages":"488-492"},"PeriodicalIF":2.0,"publicationDate":"2022-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing" IEEE电子器件学会杂志特刊“神经形态器件和内存计算的材料、加工和集成”征文

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-05 DOI: 10.1109/TDMR.2022.3202056

引用次数: 0

Member Get-A-Member (MGM) Program 米高梅会员入会计划

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-05 DOI: 10.1109/TDMR.2022.3203894

引用次数: 0

Blank Page 空白页

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-05 DOI: 10.1109/TDMR.2022.3200083

引用次数: 0

IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-05 DOI: 10.1109/TDMR.2022.3200082

引用次数: 0

TechRxiv: Share Your Preprint Research with the World! techxiv:与世界分享你的预印本研究!

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-09-05 DOI: 10.1109/TDMR.2022.3203901

引用次数: 0