IEEE Transactions on Device and Materials Reliability

IEEE Transactions on Device and Materials Reliability
期刊缩写:
IEEE Trans. Device Mater. Reliab.
影响因子:
2.5
ISSN:
print: 1530-4388
研究领域:
工程技术-工程:电子与电气
h-index:
63
自引率:
5.00%
Gold OA文章占比:
24.52%
原创研究文献占比:
98.21%
SCI收录类型:
Science Citation Index Expanded (SCIE) || Scopus (CiteScore)
期刊介绍英文:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
CiteScore:
CiteScoreSJRSNIPCiteScore排名
4.80.4361.148
学科
排名
百分位
大类:Engineering
小类:Safety, Risk, Reliability and Quality
65 / 207
68%
大类:Engineering
小类:Electrical and Electronic Engineering
274 / 797
65%
大类:Materials Science
小类:Electronic, Optical and Magnetic Materials
103 / 284
63%
发文信息
中科院SCI期刊分区
大类 小类 TOP期刊 综述期刊
3区 工程技术
3区 工程:电子与电气 ENGINEERING, ELECTRICAL & ELECTRONIC
3区 物理:应用 PHYSICS, APPLIED
WOS期刊分区
学科分类
Q2ENGINEERING, ELECTRICAL & ELECTRONIC
Q2PHYSICS, APPLIED
历年影响因子
2015年1.4370
2016年1.5750
2017年1.5120
2018年1.5830
2019年1.4070
2020年1.7610
2021年1.8860
2022年2.0000
2023年2.5000
历年发表
2012年113
2013年99
2014年179
2015年111
2016年134
2017年131
2018年104
2019年124
2020年124
2021年124
2022年71
投稿信息
出版周期:
Quarterly
出版语言:
English
出版国家(地区):
UNITED STATES
审稿时长:
6-12 weeks
出版商:
Institute of Electrical and Electronics Engineers Inc.
编辑部地址:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

IEEE Transactions on Device and Materials Reliability - 最新文献

Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation

Pub Date : 2024-09-10 DOI: 10.1109/tdmr.2024.3456832 Xuelin Yuan, Shengxian Chen, Yonglong Li, Ming Hu, Teng Zhou

Bound-Constrained Expectation Maximization for Weibull Competing-Risks Device Reliability

Pub Date : 2024-09-10 DOI: 10.1109/tdmr.2024.3457728 Uttara Chakraborty, Duane S. Boning, Carl V. Thompson

Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode

Pub Date : 2024-09-09 DOI: 10.1109/tdmr.2024.3456095 Cheng-Hao Yu, Hui Yang, Wen-Sheng Zhao, Da-Wei Wang, Hao-Min Guo, Yue Hu, Xiao-Dong Wu, Xin Tan
查看全部
免责声明:
本页显示期刊或杂志信息,仅供参考学习,不是任何期刊杂志官网,不涉及出版事务,特此申明。如需出版一切事务需要用户自己向出版商联系核实。若本页展示内容有任何问题,请联系我们,邮箱:info@booksci.cn,我们会认真核实处理。
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信