IEEE Transactions on Device and Materials Reliability最新文献

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IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI: 10.1109/TDMR.2023.3311900

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Guest Editorial TDMR IIRW Special Section 特邀编辑TDMR IIRW专区

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI: 10.1109/TDMR.2023.3306195

Francesco Maria Puglisi

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IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI: 10.1109/TDMR.2023.3305859

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IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报

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IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI: 10.1109/TDMR.2023.3305860

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IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI: 10.1109/TDMR.2023.3310690

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A Method Adopting Aging Corner to Improve the Accuracy of Device Aging Simulation Model 采用老化角提高器件老化仿真模型精度的方法

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-08-10 DOI: 10.1109/TDMR.2023.3304280

Qianqian Sang;Xinhuan Yang;Jianyu Zhang;Chuanzheng Wang;Mingyan Yu;Yuanfu Zhao

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Frequency Dependent Degradation and Failure of Flexible a-InGaZnO Thin-Film Transistors Under Dynamic Stretch Stress 动态拉伸应力下柔性a-InGaZnO薄膜晶体管的频率依赖性退化和失效

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-08-09 DOI: 10.1109/TDMR.2023.3303483

Wenjuan Zhou;Mingchen Zou;Mingxiang Wang;Dongli Zhang;Huaisheng Wang

{"title":"Frequency Dependent Degradation and Failure of Flexible a-InGaZnO Thin-Film Transistors Under Dynamic Stretch Stress","authors":"Wenjuan Zhou;Mingchen Zou;Mingxiang Wang;Dongli Zhang;Huaisheng Wang","doi":"10.1109/TDMR.2023.3303483","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3303483","url":null,"abstract":"Operation of flexible electronic devices is often limited by their degradation and failure under dynamic mechanical stress, where the loading frequency (\u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000) is found to be a critical factor in this study. The effect of \u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000 on device degradation and failure of flexible amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs) under dynamic stretch stress is investigated in a \u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000 range of 0.7 to 2.7 Hz. The TFTs exhibit strong \u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000-dependent degradation and failure behaviors, featuring larger degradation in off-state current due to mechanical-stress-induced nanocracks originated from the GI/channel interface, as well as more frequent metal wire crack at higher \u0000<inline-formula> <tex-math>${f}text{s}$ </tex-math></inline-formula>\u0000. Such a strong \u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000-dependency on flexible TFTs in micro-/nano- scales distinguishes it from all previous observations of the opposite or nil \u0000<inline-formula> <tex-math>${f}$ </tex-math></inline-formula>\u0000-dependency of the fatigue life of conventional bulk or thick-film materials under mechanical stress.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"430-435"},"PeriodicalIF":2.0,"publicationDate":"2023-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability 大功率led和焊接互连在汽车应用中的研究:第二部分-可靠性

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-08-01 DOI: 10.1109/TDMR.2023.3300355

Maximilian Schmid;Andreas Zippelius;Alexander Hanß;Stephan Böckhorst;Gordon Elger

{"title":"Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability","authors":"Maximilian Schmid;Andreas Zippelius;Alexander Hanß;Stephan Böckhorst;Gordon Elger","doi":"10.1109/TDMR.2023.3300355","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3300355","url":null,"abstract":"Thermo-mechanical reliability is one major challenge in solid-state lighting for automotive applications. Mismatches in the coefficients of thermal expansion (CTE) between high-power LED packages and substrates paired with temperature changes induce mechanical stress. This leads to thermal degradation by crack formation in the solder interconnect and/or delamination in the substrate, which in turn increases junction temperature, thus decreasing light output and reducing the lifetime. A reliability study with a total of 1,800 samples - segmented in nine LED types and five solder pastes - is performed to investigate degradation and understand the influence of solder material and LED package design. The results are presented in two papers. Initial characterization of the LEDs was handled in the first paper. This second paper focuses on degradation and lifetime. Overall, more than 40,000 transient thermal analysis (TTA) and 9,000 scanning acoustic microscopy (SAM) measurements were taken to evaluate degradation during accelerated aging of 1,500 thermal shock cycles. Six different failure modes were observed, which were distinguishable by only using TTA data. For the reliability evaluation, crack ratio was determined by SAM images while thermal degradation as well as mean lifetime were determined using TTA data. Multiple observations were made within this study. First: SAM and TTA data correlated very well; Second: Higher silver content and additives in the solder paste reduce crack growth and increases lifetime; Third: Thick film ceramic LEDs reach significant longer lifetimes than thin film ceramic LEDs, and copper lead-frame LEDs reached by far the longest lifetimes; Fourth: A pad design with a greater pad size, smaller gaps and balanced size ratio between electrical and thermal pad is advantageous; Fifth: Voiding (below 10%) has no significant influence on the reliability.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"419-429"},"PeriodicalIF":2.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10242179/10198766.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3518124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications 基于p- fet的毫米波功率放大器大信号可靠性的温度依赖性研究

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-07-11 DOI: 10.1109/TDMR.2023.3293794

Aarti Rathi;Purushothaman Srinivasan;Fernando Guarin;Abhisek Dixit

{"title":"Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications","authors":"Aarti Rathi;Purushothaman Srinivasan;Fernando Guarin;Abhisek Dixit","doi":"10.1109/TDMR.2023.3293794","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3293794","url":null,"abstract":"For the first time, the temperature dependence of RF reliability of a power amplifier (PA) is investigated for the mmWave frequency band. The PA comprises a common source configured single pFET fabricated in 45RFSOI technology by GlobalFoundries. Temperature dependence of DC and large-signal figures of merit (FOMs) are analysed as a function of RF power levels and DC stress at the gate terminal for a continuous wave (CW) frequency of 26.5GHz. In this study, we have also investigated the relationship between temperature and the time slope exponent obtained from the % degradation in ON current \u0000<inline-formula> <tex-math>$(I_{ON})$ </tex-math></inline-formula>\u0000 for different operating regions of PA. The degradation mechanism involves trapping hot holes in pre-existing traps and the generation of new traps in the oxide due to hot holes. A non-linear relationship between DC and RF FOMs \u0000<inline-formula> <tex-math>$(I_{ON}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$P_{OUT})$ </tex-math></inline-formula>\u0000 is investigated for the increasing temperature. The non-linear relationship extracted from the slope between \u0000<inline-formula> <tex-math>${Delta }I_{ON}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${Delta }P_{OUT}$ </tex-math></inline-formula>\u0000 shows that the DC performance is impacted more than the RF performance with the increasing temperature. Degradation in output power of PA cell increases with the temperature. As a result, the lifetime of PA cell decreases with increasing temperature and fails to achieve a 10-year lifetime.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"412-418"},"PeriodicalIF":2.0,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3505007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Study on Lifetime Modeling of IGBT Modules Considering Electric Frequency Influence Mechanism 考虑电频率影响机理的IGBT模块寿命建模研究

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-06-22 DOI: 10.1109/TDMR.2023.3288144

Wei Lai;Anbin Liu;Zhi Wang;Miaomiao Shangguan;Hui Li;Minyou Chen;Ran Yao;Yan Xiong

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