IEEE Transactions on Device and Materials Reliability最新文献

IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-09-10 DOI: 10.1109/TDMR.2025.3603779

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Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-09-10 DOI: 10.1109/TDMR.2025.3603929

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IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-09-10 DOI: 10.1109/TDMR.2025.3603780

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Reliability of Advanced Nodes 高级节点可靠性

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-09-10 DOI: 10.1109/TDMR.2025.3603930

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Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET 电子辐照和热循环对SiC MOSFET电性能的影响

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-13 DOI: 10.1109/TDMR.2025.3598525

Xiao Chen;Yadi Xu;Rongxing Cao;Bo Mei;Hanxun Liu;Weixiang Zhou;Zihua Feng;Yuxiong Xue;Yang Liu

{"title":"Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET","authors":"Xiao Chen;Yadi Xu;Rongxing Cao;Bo Mei;Hanxun Liu;Weixiang Zhou;Zihua Feng;Yuxiong Xue;Yang Liu","doi":"10.1109/TDMR.2025.3598525","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3598525","url":null,"abstract":"SiC MOSFET plays an important role in the application of power devices in the aerospace field due to its excellent physical properties, but its performance still faces severe challenges from temperature changes and high-intensity radiation in space. In this work, the effects of electron irradiation and thermal cycles on SiC MOSFET devices were studied. The experimental and simulation results show that the electron irradiation makes oxide capture a large number of positive charges, which leads to the negative drift of threshold voltage. When the irradiation dose is 1Mrad, the threshold voltage is reduced by 17%. The thermal cycling induced stress concentration at the SiC/SiO2 interface results in lattice dislocation and mismatch at the interface, which increases the amount of charge. After 120 cycles, the threshold voltage of the devices is reduced by 32.75%. On this basis, the same device was subjected to electron irradiation and thermal cycling in turn. The experimental results show that thermal cycling can further aggravate the threshold voltage drift induced by electron irradiation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"684-691"},"PeriodicalIF":2.3,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes Via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance 利用电探测磁共振和近零场磁电阻检测质子辐照损伤的4H-SiC肖特基二极管

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI: 10.1109/TDMR.2025.3597973

Dustin T. Hassenmayer;Patrick M. Lenahan;Edward S. Bielejec;Joshua M. Young;David J. Spry

{"title":"Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes Via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance","authors":"Dustin T. Hassenmayer;Patrick M. Lenahan;Edward S. Bielejec;Joshua M. Young;David J. Spry","doi":"10.1109/TDMR.2025.3597973","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3597973","url":null,"abstract":"We utilize Electrically Detected Magnetic Resonance (EDMR) and Near-Zero-Field Magnetoresistance (NZFMR) to identify the physical and chemical nature of atomic scale defects generated by proton bombardment of 4H-SiC Schottky diodes. We use EDMR and NZFMR to explore proton irradiation created deep level defects which contribute to trap-assisted tunneling through the Schottky barrier. We measure the spin-dependent response of the deep level defect for both an irradiated and unirradiated diode to compare the effects that proton irradiation has on device performance. We observe that the unirradiated diode has no response, and the irradiated diode has a large response. The maximum change in current (<inline-formula> <tex-math>$Delta {I}$ </tex-math></inline-formula>/I) due to NZFMR is 0.44% which occurs at 1.3V forward bias. The nature of the response is consistent with several reports of spin-dependent trap-assisted tunneling (SDTAT) [11, 15, 23, 24]. The EDMR response has an isotropic g-value of 2.003 and is ~10G wide. We tentatively ascribe this response to a negatively charged silicon vacancy (<inline-formula> <tex-math>${mathrm {V}}_{text {Si-}}$ </tex-math></inline-formula>). Our work shows that EDMR and NZFMR have the sensitivity and analytical power to study the physical and chemical nature of point defects caused by particle irradiation in these devices. More Importantly, it suggests that these techniques may be widely applicable to investigations of particle irradiation on semiconductor devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"394-400"},"PeriodicalIF":2.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability 具有高输出功率和热可靠性的烧结银基直接冷却igbt

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI: 10.1109/TDMR.2025.3598012

Bowen Zhang;Xinyan Lu;Yibin Sun;Youzheng Wang;Yun-Hui Mei

{"title":"Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability","authors":"Bowen Zhang;Xinyan Lu;Yibin Sun;Youzheng Wang;Yun-Hui Mei","doi":"10.1109/TDMR.2025.3598012","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3598012","url":null,"abstract":"The heat generated by IGBT modules during DC/AC power conversion requires the development of highly efficient direct-cooled thermal dissipation structures. Herein, direct-cooled IGBTs are realized using sintered silver (Ag) as the thermal interface materials (TIMs) between DBC substrate and heat sink. The high thermal homogeneity of Sintered Ag-IGBTs is first confirmed by the thermal performance differences derived from finite element simulations. The heat transfer advantage of sintered Ag enables fast thermal conduction from chip to heat sink, thus reducing the dynamic switching losses of Sintered Ag-IGBTs by 26%. Compared to SAC 305-IGBTs, the output current of Sintered Ag-IGBTs increased from 812 A to 848 A under the same driving conditions. Due to the low interfacial thermal resistance of sintered silver, the average thermal resistance reduction of 11.9% and the average chip junction temperature reduction of <inline-formula> <tex-math>$5.5~^{circ }$ </tex-math></inline-formula>C are realized in Sintered Ag-IGBTs. The high output power and thermal reliability of direct-cooled IGBTs are expected to facilitate their high-power density applications.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"734-741"},"PeriodicalIF":2.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Simultaneous Enhancement of Electrochemical Migration Lifetime and Reliability of Sintered Silver 同时提高烧结银的电化学迁移寿命和可靠性

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI: 10.1109/TDMR.2025.3598109

Bowen Zhang;Lijia Wang;Yilong Xie;Yiqin Liu;Youzheng Wang;Yi Liu;Yun-Hui Mei

{"title":"Simultaneous Enhancement of Electrochemical Migration Lifetime and Reliability of Sintered Silver","authors":"Bowen Zhang;Lijia Wang;Yilong Xie;Yiqin Liu;Youzheng Wang;Yi Liu;Yun-Hui Mei","doi":"10.1109/TDMR.2025.3598109","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3598109","url":null,"abstract":"The high operation temperature and large voltage bias service environments of wide bandgap (WBG) devices often result in the failure of sintered silver layer due to electrochemical migration (ECM). Herein, novel silver-based paste was prepared by incorporating 5 wt% In particles (Ag-5%In), which effectively balanced the ECM lifetime and the reliability of bonding samples. During high temperatures (400 °C) and high voltages (400 V) ECM tests, the preferential formation of In2O3 in Ag-5%In paste effectively inhibited the oxidation and ionization processes of Ag, thereby prolonging the ECM failure time from 462 min to 839 min. In addition, the formation of Ag-In intermetallic compounds (IMCs) and the densification of interconnection layer resulted in high reliability of Ag-5%In paste during the thermal shock test (TST), with the average shear strength remaining around 24.6 MPa after 1000 TST cycles. The comprehensive ECM and mechanical reliability make the proposed Ag-5%In paste a promising packaging material for high-temperature and high-voltage applications of WBG devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"535-544"},"PeriodicalIF":2.3,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145051048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Sensitivity of Logic Cells to Laser Fault Injections: An Overview of Experimental Results for IHP Technologies 逻辑细胞对激光故障注入的敏感性：IHP技术的实验结果综述

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-06 DOI: 10.1109/TDMR.2025.3596380

Dmytro Petryk;Peter Langendoerfer;Zoya Dyka

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Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC Conditions for BTI and TDDB 评估DRAM CMOS外围器件的可靠性：比较BTI和TDDB的交流和直流条件

IF 2.3 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-04 DOI: 10.1109/TDMR.2025.3595501

Alexandre Subirats;Mehran Samiee;Giovanni Ferrari;Uma Sharma;Takuya Imamoto;Masahiro Yokomichi;Shivani Srivastava;Karine Florent;Tim Owens

{"title":"Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC Conditions for BTI and TDDB","authors":"Alexandre Subirats;Mehran Samiee;Giovanni Ferrari;Uma Sharma;Takuya Imamoto;Masahiro Yokomichi;Shivani Srivastava;Karine Florent;Tim Owens","doi":"10.1109/TDMR.2025.3595501","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3595501","url":null,"abstract":"This paper presents an in-depth analysis of fast Bias Temperature Instability (BTI) and Time-Dependent Dielectric Breakdown (TDDB) in DRAM CMOS periphery devices, focusing on NMOS and PMOS transistors. Using rapid measurement techniques, we evaluate BTI degradation under both DC and AC stress modes. Our findings reveal that AC Negative BTI-Mode B (NBTI) shows frequency independence. Positive BTI (PBTI) in AC mode (A and B) also demonstrates frequency independence. Additionally, the study uncovers trends in TDDB behavior for NMOS and PMOS devices. PMOS TDDB performance improves at higher frequencies compared to DC, while NMOS TDDB shows degradation at lower frequencies with improved performance at higher frequencies. These results suggest a need for further investigation into the correlation between these reliability mechanisms to develop effective mitigation strategies. By exploring the relationships between BTI and TDDB, we aim to enhance the knowledge of those two similar (from the device point of view during stress) mechanisms","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"388-393"},"PeriodicalIF":2.3,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145051047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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