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IEEE Transactions on Device and Materials Reliability最新文献

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Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575823
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引用次数: 0
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575821
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引用次数: 0
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters IEEE电子设备通讯总编辑提名
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3558657
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引用次数: 0
IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575830
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引用次数: 0
Reliability of Advanced Nodes 高级节点可靠性
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575822
{"title":"Reliability of Advanced Nodes","authors":"","doi":"10.1109/TDMR.2025.3575822","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3575822","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"359-360"},"PeriodicalIF":2.5,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11028626","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3558210
{"title":"IEEE Transactions on Device and Materials Reliability Publication Information","authors":"","doi":"10.1109/TDMR.2025.3558210","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3558210","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11028134","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices(TED) IEEE电子设备汇刊（TED）总编辑提名公告
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3558656
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices(TED)","authors":"","doi":"10.1109/TDMR.2025.3558656","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3558656","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"352-352"},"PeriodicalIF":2.5,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11028631","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-06-09 DOI: 10.1109/TDMR.2025.3575820
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TDMR.2025.3575820","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3575820","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"357-358"},"PeriodicalIF":2.5,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11028127","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches 大电流脉冲晶闸管开关电侵蚀加速失效机理研究
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-04-29 DOI: 10.1109/TDMR.2025.3565618
Shiyun Xiao;Yi Liu;Liuxia Li;Fuchang Lin;Yunxin Miao
{"title":"Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches","authors":"Shiyun Xiao;Yi Liu;Liuxia Li;Fuchang Lin;Yunxin Miao","doi":"10.1109/TDMR.2025.3565618","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3565618","url":null,"abstract":"High-current pulse thyristor-based switches operate under high-current pulse conditions and are subjected to coupled electromagnetic-thermomechanical stresses, resulting in the progressive development of thermal fatigue-induced failure mechanisms. The study revealed that localized overheating triggers electrical erosion of the aluminum layer, which further accelerates the thermal fatigue failure of high-current switches. To investigate this phenomenon, a microscopic model of the silicon-aluminum interface incorporating surface roughness effects was developed to quantify the transient temperature rise and electrical erosion threshold under varying pulsed current conditions, with experimental validation demonstrating strong agreement. Furthermore, using a thermal network model, we established a correlation between the electrical erosion threshold and the average junction temperature for different high-current pulses and clamping stresses, thereby defining the operational range for electrical erosion in high-current pulse thyristor-based switches. This provides theoretical guidance for the reliable operation of these switches.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"263-273"},"PeriodicalIF":2.5,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability MoO3修饰PSi异质结构的忆阻开关行为及温度对器件可靠性的影响
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-04-24 DOI: 10.1109/TDMR.2025.3563885
B Sharmila;Kr. Sarkar Achintya;Priyanka Dwivedi
{"title":"Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability","authors":"B Sharmila;Kr. Sarkar Achintya;Priyanka Dwivedi","doi":"10.1109/TDMR.2025.3563885","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3563885","url":null,"abstract":"This paper presents the fabrication, testing device reliability and impact of temperature variation on the MoO3 decorated PSi heterostructure. The memristor devices are fabricated using standard microfabrication processes. The MoO3 decorated PSi heterostructure memristor has shown the current switching ratio, resistance switching ratio of 67 and <inline-formula> <tex-math>$7times 10{^{{3}}}$ </tex-math></inline-formula> respectively at room temperature (RT). The reliability test of the MoO3 decorated PSi heterostructure based memristor device is tested using the thermal stimuli ranging from RT to 100°C. The developed device has shown the current switching ratio of 200 at 90°C, which is close to three times higher than the measurements at RT. Further, stability/reproducibility of the fabricated device was verified using the modulated frequency test at 90°C.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"335-340"},"PeriodicalIF":2.5,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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