IEEE Transactions on Device and Materials Reliability最新文献

{"title":"Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology","authors":"D. Sangani;J. Diaz-Fortuny;E. Bury;J. Franco;B. Kaczer;G. Gielen","doi":"10.1109/TDMR.2023.3288380","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3288380","url":null,"abstract":"With tightening reliability margins, product-level aging analysis is gradually gaining impetus and is set to become an integral part of the modern design flow. Increased emphasis is placed on the development of physics-based compact models for the phenomena responsible for transistor degradation and their integration into EDA environments. Commercial Process Design Kits (PDKs) of advanced technologies have also started to include compact models for transistor degradation along with a dedicated reliability simulation framework. In this work, we present a comprehensive study of the compact aging models in one such commercial PDK, with the help of extensive measurement data from individual devices as well as Ring Oscillators (RO). Then, we perform our own extraction of model parameter shifts from full \u0000<inline-formula> <tex-math>$I_{d}$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>$V_{gs}$ </tex-math></inline-formula>\u0000 fitting of the measured BTI-stressed devices to gain insight into the modeling procedure adopted by the foundry. We finally use the parameters extracted thusly to investigate the impact of the time-0 and the time-dependent device-to-device variability on RO degradation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"346-354"},"PeriodicalIF":2.0,"publicationDate":"2023-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SOI FinFET Design Optimization for Radiation Hardening and Performance Enhancement","authors":"Yichao Sun;Yujuan He;Peng Lu;Qingzhu Zhang;Fazhan Zhao;Zhengsheng Han;Bo Li","doi":"10.1109/TDMR.2023.3287839","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3287839","url":null,"abstract":"This work proposes Total Ionizing Dose (TID) hardening techniques compatible with conventional 14-nm-node silicon-on-insulator (SOI) FinFETs’ process flows through performing 3-dimensional (3-D) simulations based on technology computer-aided design (TCAD) tools. The simulation results reveal a significantly critical TID impact induced by trapped charges in the buried oxide (BOX) and the spacer with calibration against 14 nm SOI FinFET’s experimental data (error ¡ 6%). Inspired by the physical interpretation, an optimization technique featuring an optimized gate structure, spacer length, and substrate bias is designed. The optimized gate structure is utilized to enhance the local gate-to-channel coupling at the bottom and reduce the generation and capture of electron-hole pairs. By reducing the spacer length, a lower sensitive volume in the spacer can effectively suppress the TID response. The setting of the negative substrate bias greatly improves the subthreshold characteristics, weakening the TID effect in the BOX. By adopting the combined optimization including these techniques, the threshold voltage shift \u0000<inline-formula> <tex-math>$(Delta V_{mathrm{ TH}})$ </tex-math></inline-formula>\u0000 induced by a 5 Mrad(SiO2) irradiation can be reduced to 21 mV, whereas \u0000<inline-formula> <tex-math>$Delta V_{mathrm{ TH}}$ </tex-math></inline-formula>\u0000 is 45 mV with only gate structure optimized and 97 mV without hardening. Meanwhile, the \u0000<inline-formula> <tex-math>$I_{mathrm{ ON}}/I_{mathrm{ OFF}}$ </tex-math></inline-formula>\u0000 after radiation increases to \u0000<inline-formula> <tex-math>$1times 10,,^{mathrm{ 7}}$ </tex-math></inline-formula>\u0000, which is at least four orders of magnitude better than the original device. Meanwhile, subthreshold swing (SS) is reduced from 81 mV/dec to 71 mV/dec, and Drain Induced Barrier Lowering (DIBL) is reduced from 120 mV/V to 99 mV/V, respectively. The combined optimization design is demonstrated as an effective method to improve the tolerance against TID irradiation without compromising performance, promoting 14 nm SOI FinFET’s application in future harsh space environments.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"386-394"},"PeriodicalIF":2.0,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Analysis of PEDOT and ITO Under Thermal Bending and Cycling Stresses: Implications for Flexible Solar Cells","authors":"Mohammad M. Hamasha;Nasr Aldin Taamneh;Sa’d Hamasha;Khozima Hamasha;Sahar Al Mashaqbeh;Khalid Alzoubi","doi":"10.1109/TDMR.2023.3287800","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3287800","url":null,"abstract":"Poly(3,4-ethylenedioxythiophene) (PEDOT) and Indium Tin Oxide (ITO) are widely used in electronic devices, but their stability under thermal stress is a concern. Both PEDOT and ITO are susceptible to thermal stress, but their stability depends on the temperature and duration of exposure. To ensure long-term stability, it is essential to use appropriate thermal management techniques and stable materials. ITO has good mechanical stability under stretching and bending, while PEDOT can withstand high strains. Flexible solar cells are exposed to heating-cooling cycles, and when the thin film and substrate expand at different rates, residual strains caused by the thermal mismatch occur. ITO is heavily used in flexible solar cells, but indium is scarce and expected to run out within 50 years. PEDOT is a candidate to replace ITO and is currently under intensive research. This paper compares the thermal stability of PEDOT and ITO under thermal bending and cycling stress. In order to investigate the significance of different factors on thin film electrical characteristics, the DOE (design of experiments) tool was used for data collection and analysis of variance was used to analyze the data. The results showed that PEDOT is better than ITO under cyclic bending loading, while ITO is slightly more stable than PEDOT under thermal stress. These findings provide new insights into the behavior of PEDOT and ITO under thermal stress and their potential applications in electronic devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"404-411"},"PeriodicalIF":2.0,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3505175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Blank Page","authors":"","doi":"10.1109/TDMR.2023.3277337","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3277337","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 2","pages":"C4-C4"},"PeriodicalIF":2.0,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10145596/10145837.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3484377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TDMR.2023.3282736","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3282736","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 2","pages":"304-304"},"PeriodicalIF":2.0,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10145596/10145839.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3485652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Device and Materials Reliability Information for Authors","authors":"","doi":"10.1109/TDMR.2023.3277336","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3277336","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 2","pages":"C3-C3"},"PeriodicalIF":2.0,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10145596/10145865.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3484375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Device and Materials Reliability Publication Information","authors":"","doi":"10.1109/TDMR.2023.3277335","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3277335","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 2","pages":"C2-C2"},"PeriodicalIF":2.0,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10145596/10145840.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3494008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on \"Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications\"","authors":"","doi":"10.1109/TDMR.2023.3280336","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3280336","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 2","pages":"302-303"},"PeriodicalIF":2.0,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/7298/10145596/10145838.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3517736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending","authors":"Savita Kashyap;Rahul Pandey;Jaya Madan;Mustafa K. A. Mohammed","doi":"10.1109/TDMR.2023.3282641","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3282641","url":null,"abstract":"Perovskite solar cells (PSCs) have been considered the new rising star in photovoltaic (PV) technology. However, flexibility is the major limiting factor in PSCs for restraining the potential for wearable applications. Therefore, the flexible-PSC (F-PSC) design is reported and simulated using the Silvaco-TCAD tool. Different bending modes, such as concave, convex, and sinusoidal, including planar structure, have been reported to examine the performance of the proposed device. The influence of bending radius (5 to 20 mm) and bending amplitude (0.5 to 2 mm) is studied and analyzed to optimize the performance of the F-PSC device. It has been obtained that the planar F-PSC delivers higher PV parameters: short-circuit current density (JSC) of 21.9 mA/cm2, open-circuit voltage (VOC) of 1.18 V, fill factor (FF) of 79.31% and PCE of 20.5%. Simulated results are obtained regarding PV parameters, JV, and EQE characteristics. The findings of the reported study would significantly provide a way to explore the F-PSC performance with better-bending properties.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"380-385"},"PeriodicalIF":2.0,"publicationDate":"2023-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI","authors":"Pietro Rinaudo;A. Chasin;J. Franco;Z. Wu;S. Subhechha;G. Arutchelvan;G. Eneman;B. Y. V. Ramana;N. Rassoul;R. Delhougne;B. Kaczer;I. De Wolf;G. S. Kar","doi":"10.1109/TDMR.2023.3282298","DOIUrl":"https://doi.org/10.1109/TDMR.2023.3282298","url":null,"abstract":"We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data. We also identify an unexpected gate-length dependence of BTI, for which different extrinsic causes are investigated.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 3","pages":"337-345"},"PeriodicalIF":2.0,"publicationDate":"2023-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3507831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}