SiGe HBTs的低温总电离剂量效应和退火行为

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-01-01 DOI:10.1109/TDMR.2024.3523303

Jianan Wei;Peijian Zhang;Xiaohui Yi;Min Hong;Xiaojun Fu;Xinyue Tang;Kun Qian;Xiaolei Zhang;Wenlong Liao;Jiandong Zang;Lei Zhang;Ting Luo;Yunchen Wu

{"title":"SiGe HBTs的低温总电离剂量效应和退火行为","authors":"Jianan Wei;Peijian Zhang;Xiaohui Yi;Min Hong;Xiaojun Fu;Xinyue Tang;Kun Qian;Xiaolei Zhang;Wenlong Liao;Jiandong Zang;Lei Zhang;Ting Luo;Yunchen Wu","doi":"10.1109/TDMR.2024.3523303","DOIUrl":null,"url":null,"abstract":"The total ionizing dose (TID) responses of <inline-formula> <tex-math>$0.35~\\mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$0.13~\\mu $ </tex-math></inline-formula>m SiGe HBTs at liquid-nitrogen temperature (78 K) were investigated using 10 keV X-rays. For the first time, we compared the annealing behaviors of SiGe HBTs irradiated at 78 K and room temperature (297 K). The results reconfirm that SiGe HBTs have superior TID tolerance up to Mrad(Si) levels, and the current gain degradation of DUTs irradiated at 78 K is much less than those irradiated at 297 K. However, the <inline-formula> <tex-math>$0.35~\\mu $ </tex-math></inline-formula>m SiGe HBTs irradiated at 78 K show further degradation after room temperature annealing (RTA) due to the thermal activation of oxide charge migration and the long-term buildup of interface traps. The <inline-formula> <tex-math>$0.13~\\mu $ </tex-math></inline-formula>m SiGe HBTs irradiated at 78 K show minor change after RTA, which can be attributed to the competition between interface trap creation and annealing.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"150-155"},"PeriodicalIF":2.5000,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cryogenic Total Ionizing Dose Effects and Annealing Behaviors of SiGe HBTs\",\"authors\":\"Jianan Wei;Peijian Zhang;Xiaohui Yi;Min Hong;Xiaojun Fu;Xinyue Tang;Kun Qian;Xiaolei Zhang;Wenlong Liao;Jiandong Zang;Lei Zhang;Ting Luo;Yunchen Wu\",\"doi\":\"10.1109/TDMR.2024.3523303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The total ionizing dose (TID) responses of <inline-formula> <tex-math>$0.35~\\\\mu $ </tex-math></inline-formula>m and <inline-formula> <tex-math>$0.13~\\\\mu $ </tex-math></inline-formula>m SiGe HBTs at liquid-nitrogen temperature (78 K) were investigated using 10 keV X-rays. For the first time, we compared the annealing behaviors of SiGe HBTs irradiated at 78 K and room temperature (297 K). The results reconfirm that SiGe HBTs have superior TID tolerance up to Mrad(Si) levels, and the current gain degradation of DUTs irradiated at 78 K is much less than those irradiated at 297 K. However, the <inline-formula> <tex-math>$0.35~\\\\mu $ </tex-math></inline-formula>m SiGe HBTs irradiated at 78 K show further degradation after room temperature annealing (RTA) due to the thermal activation of oxide charge migration and the long-term buildup of interface traps. The <inline-formula> <tex-math>$0.13~\\\\mu $ </tex-math></inline-formula>m SiGe HBTs irradiated at 78 K show minor change after RTA, which can be attributed to the competition between interface trap creation and annealing.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"25 1\",\"pages\":\"150-155\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10819490/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10819490/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

用10 keV x射线研究了液氮温度（78 K）下$0.35~\mu $ m和$0.13~\mu $ m SiGe HBTs的总电离剂量（TID）响应。我们首次比较了78 K和297 K下SiGe HBTs的退火行为，结果再次证实了SiGe HBTs在Mrad（Si）水平下具有优越的TID耐受性，并且78 K下的电流增益衰减远小于297 K下的。然而，在78 K下辐照的$0.35~\mu $ m SiGe HBTs在室温退火（RTA）后，由于氧化物电荷迁移的热激活和界面陷阱的长期积累，表现出进一步的降解。78 K下辐照的$0.13~\mu $ m SiGe HBTs在RTA后变化不大，这可归因于界面陷阱产生和退火之间的竞争。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Cryogenic Total Ionizing Dose Effects and Annealing Behaviors of SiGe HBTs

The total ionizing dose (TID) responses of

$0.35~\mu $

m and

$0.13~\mu $

m SiGe HBTs at liquid-nitrogen temperature (78 K) were investigated using 10 keV X-rays. For the first time, we compared the annealing behaviors of SiGe HBTs irradiated at 78 K and room temperature (297 K). The results reconfirm that SiGe HBTs have superior TID tolerance up to Mrad(Si) levels, and the current gain degradation of DUTs irradiated at 78 K is much less than those irradiated at 297 K. However, the

$0.35~\mu $

m SiGe HBTs irradiated at 78 K show further degradation after room temperature annealing (RTA) due to the thermal activation of oxide charge migration and the long-term buildup of interface traps. The

$0.13~\mu $

m SiGe HBTs irradiated at 78 K show minor change after RTA, which can be attributed to the competition between interface trap creation and annealing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.