Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-27 DOI:10.1109/TDMR.2024.3523577

Xin Zhou;Jie Shen;Ziqiu Tong;Zhao Qi;Ming Qiao;Zhaoji Li;Bo Zhang

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引用次数: 0

Abstract

In this paper, a novel radiation hardened SOI LDMOS with dual P-type layers is proposed. Based on irradiation charge field modulation, two P-type layers are introduced at the surface and bottom in N-drift region for suppressing shifts of both specific on-resistance

$(R_{\textrm {on,sp}})$

and breakdown voltage (BV). Irradiation charge field is shielded by the P-type layers at low drain voltage and electron behavior in the bulk is protected against the modulation, resulting in

$R_{\textrm {on,sp}}$

shifting less significantly. Besides, net charge density in drift region is reduced by the P-type layers, and then surface electric field is weakened at source side, resulting in a non-monotonic shift in BV. A low net charge density with high donor doping concentration in P-N-P drift region is pursued instead of charge balance required in traditional design. Simulated optimized results show that

$R_{\textrm {on,sp}}$

shifts only 11.4% at TID

${=} 300$

krad(Si).

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.