基于任务剖面的汽车牵引逆变器直流电容热点温度和寿命估算

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kaining Kuang;Xinhua Guo;Zhengyan Zhou;Chunzhen Li;Xiuwan Li
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引用次数: 0

摘要

在电动汽车中,在牵引逆变器中安装薄膜电容器以减小纹波电流。然而,商用薄膜电容器的寿命对温度波动非常敏感。牵引逆变器内部的高环境温度经常导致这些电容器过早失效,严重影响牵引驱动系统的可靠性。在现有的研究中,电容器的内部损耗通常被视为常数,忽略了由操作条件变化和老化引起的变化,这导致了预测寿命与实际寿命之间的差异。本文首先提出了一种新的有限元分析(FEA)建模策略,通过考虑电容器铁芯内损耗的分布来更准确地确定热点温升。其次,基于联邦测试程序-75 (FTP-75)驾驶循环,得到电动汽车运行过程中电容器的工作曲线。然后,根据Miner法则对电容器的累积损伤进行评估,并对薄膜电容器的寿命进行评估。该方法可为电容器更换规划提供参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters
In electric vehicles (EVs), film capacitors are installed in the traction inverter to reduce ripple current. However, the lifespan of commercial film capacitors is highly sensitive to temperature fluctuations. The high ambient temperature within the traction inverter often leads to the premature failure of these capacitors, severely impacting the reliability of the traction drive system. In existing studies, the internal losses of capacitors have often been treated as constant, overlooking variations caused by changes in operating conditions and aging, which results in discrepancies between predicted and actual lifespans. This paper first proposes a new finite element analysis (FEA) modelling strategy to more accurately determine the hotspot temperature rise by considering the distribution of losses within the capacitor core. Next, based on the Federal Testing Procedure -75 (FTP-75) driving cycle, the operating profile of capacitors during EV operation is obtained. Following that, the cumulative damage of the capacitor is evaluated according to Miner’s rule, and the lifespan of the film capacitors is assessed. This method can offer a reference for capacitor replacements planning.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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