IEEE Transactions on Device and Materials Reliability最新文献_第10页

AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators 深度神经网络加速器容错的自适应近似乘法器

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-27 DOI: 10.1109/TDMR.2024.3523386

Mahdi Taheri;Natalia Cherezova;Samira Nazari;Ali Azarpeyvand;Tara Ghasempouri;Masoud Daneshtalab;Jaan Raik;Maksim Jenihhin

{"title":"AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators","authors":"Mahdi Taheri;Natalia Cherezova;Samira Nazari;Ali Azarpeyvand;Tara Ghasempouri;Masoud Daneshtalab;Jaan Raik;Maksim Jenihhin","doi":"10.1109/TDMR.2024.3523386","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3523386","url":null,"abstract":"Deep Neural Network (DNN) hardware accelerators are essential in a spectrum of safety-critical edge-AI applications with stringent reliability, energy efficiency, and latency requirements. Multiplication is the most resource-hungry operation in the neural network’s processing elements. This paper proposes a scalable adaptive fault-tolerant approximate multiplier (AdAM) tailored for ASIC-based DNN accelerators at the algorithm and circuit levels. AdAM employs an adaptive adder that relies on an unconventional use of input Leading One Detector (LOD) values for fault detection by optimizing unutilized adder resources. A gate-level optimized LOD design and a hybrid adder design are also proposed as a part of the adaptive multiplier to improve the hardware performance. The proposed architecture uses a lightweight fault mitigation technique that sets the detected faulty bits to zero. The hardware resource utilization and the DNN accelerator’s reliability metrics are used to compare the proposed solution against the Triple Modular Redundancy (TMR) in multiplication, unprotected exact multiplication, and unprotected approximate multiplication. It is demonstrated that the proposed architecture enables a multiplication with a reliability level close to the multipliers protected by TMR while at the same time utilizing <inline-formula> <tex-math>$2.74 times $ </tex-math></inline-formula> less area and with 39.06% less power-delay product compared to the exact multiplier. Moreover, it has similar area, delay, and power consumption parameters compared to the state-of-the-art approximate multipliers with similar accuracy while providing fault detection and mitigation capability.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"66-75"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters 基于任务剖面的汽车牵引逆变器直流电容热点温度和寿命估算

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-27 DOI: 10.1109/TDMR.2024.3523341

Kaining Kuang;Xinhua Guo;Zhengyan Zhou;Chunzhen Li;Xiuwan Li

{"title":"Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters","authors":"Kaining Kuang;Xinhua Guo;Zhengyan Zhou;Chunzhen Li;Xiuwan Li","doi":"10.1109/TDMR.2024.3523341","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3523341","url":null,"abstract":"In electric vehicles (EVs), film capacitors are installed in the traction inverter to reduce ripple current. However, the lifespan of commercial film capacitors is highly sensitive to temperature fluctuations. The high ambient temperature within the traction inverter often leads to the premature failure of these capacitors, severely impacting the reliability of the traction drive system. In existing studies, the internal losses of capacitors have often been treated as constant, overlooking variations caused by changes in operating conditions and aging, which results in discrepancies between predicted and actual lifespans. This paper first proposes a new finite element analysis (FEA) modelling strategy to more accurately determine the hotspot temperature rise by considering the distribution of losses within the capacitor core. Next, based on the Federal Testing Procedure -75 (FTP-75) driving cycle, the operating profile of capacitors during EV operation is obtained. Following that, the cumulative damage of the capacitor is evaluated according to Miner’s rule, and the lifespan of the film capacitors is assessed. This method can offer a reference for capacitor replacements planning.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"134-143"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field 双p型层屏蔽辐照电荷场的辐射硬化SOI LDMOS

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-27 DOI: 10.1109/TDMR.2024.3523577

Xin Zhou;Jie Shen;Ziqiu Tong;Zhao Qi;Ming Qiao;Zhaoji Li;Bo Zhang

{"title":"Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field","authors":"Xin Zhou;Jie Shen;Ziqiu Tong;Zhao Qi;Ming Qiao;Zhaoji Li;Bo Zhang","doi":"10.1109/TDMR.2024.3523577","DOIUrl":"https://doi.org/10.1109/TDMR.2024.3523577","url":null,"abstract":"In this paper, a novel radiation hardened SOI LDMOS with dual P-type layers is proposed. Based on irradiation charge field modulation, two P-type layers are introduced at the surface and bottom in N-drift region for suppressing shifts of both specific on-resistance <inline-formula> <tex-math>$(R_{textrm {on,sp}})$ </tex-math></inline-formula> and breakdown voltage (BV). Irradiation charge field is shielded by the P-type layers at low drain voltage and electron behavior in the bulk is protected against the modulation, resulting in <inline-formula> <tex-math>$R_{textrm {on,sp}}$ </tex-math></inline-formula> shifting less significantly. Besides, net charge density in drift region is reduced by the P-type layers, and then surface electric field is weakened at source side, resulting in a non-monotonic shift in BV. A low net charge density with high donor doping concentration in P-N-P drift region is pursued instead of charge balance required in traditional design. Simulated optimized results show that <inline-formula> <tex-math>$R_{textrm {on,sp}}$ </tex-math></inline-formula> shifts only 11.4% at TID <inline-formula> <tex-math>${=} 300$ </tex-math></inline-formula>krad(Si).","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"144-149"},"PeriodicalIF":2.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TechRxiv: Share Your Preprint Research with the World! techxiv：与世界分享你的预印本研究！

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3520737

引用次数: 0

IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3516717

引用次数: 0

TDMR December 2024 Editorial TDMR 2024年12月社论

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3508312

Edmundo Gutierrez

引用次数: 0

IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3516718

引用次数: 0

Blank Page 空白页

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3516719

引用次数: 0

Editorial on EOS EOS评论

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3507412

Ming-Dou Ker

引用次数: 0

Call for Nominations for Editor-in-Chief 征集总编辑提名

IF 2.5 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-12-23 DOI: 10.1109/TDMR.2024.3513737

引用次数: 0