IEEE Transactions on Device and Materials Reliability最新文献_第10页

A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems 一种评估冗余安全仪表系统可靠性的一致性分析方法

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-27 DOI: 10.1109/TDMR.2022.3193922

Abdul Mateen Mohammed;Seyed Morteza Alizadeh;Kamyar Mehranzamir

{"title":"A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems","authors":"Abdul Mateen Mohammed;Seyed Morteza Alizadeh;Kamyar Mehranzamir","doi":"10.1109/TDMR.2022.3193922","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3193922","url":null,"abstract":"The significance of determining Safety Integrity Level (SIL) has grown substantially in numerous industry sectors since the publication of international standard for functional safety (IEC61508). To detect SIL using IEC61508, the demand mode must first be recognised. However, there is not any 100% accurate method to identify the demand mode. Design engineers must assume the demand mode based on their assessment of the likely number of failures each year in the system under consideration, referred to as demand rate. This signifies that a defective demand mode assumption leads to an incorrect SIL determination. In addition, the formulas provided by the IEC standards for the SIL determination did not include the demand duration. The majority of prior publications in the literature relied on SIL determination using IEC61508. As a result, the literature suffers from the constraints of the IEC61508 standard, which include ignoring demand duration and uncertainty in assuming the system’s demand mode for determining SIL. This paper addresses the aforementioned issues in literature through proposing a scenario based-formula to calculate Hazardous Event Frequency (HEF) using Markov process for safety system with dual redundancy. The HEF calculated can then be utilized to select SIL while considering the demand duration and obviating the requirement to use the SIS demand mode. The results demonstrated that the proposed method provides higher accuracy in calculating the HEF value compared to the existing traditional formulas.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"447-456"},"PeriodicalIF":2.0,"publicationDate":"2022-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory NAND闪存抗全电离剂量数据存储新技术

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-11 DOI: 10.1109/TDMR.2022.3189673

Matchima Buddhanoy;Sadman Sakib;Umeshwarnath Surendranathan;Maryla Wasiolek;Khalid Hattar;Aleksandar Milenković;Biswajit Ray

{"title":"New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory","authors":"Matchima Buddhanoy;Sadman Sakib;Umeshwarnath Surendranathan;Maryla Wasiolek;Khalid Hattar;Aleksandar Milenković;Biswajit Ray","doi":"10.1109/TDMR.2022.3189673","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3189673","url":null,"abstract":"This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from \u0000<inline-formula> <tex-math>$mathbf {sim }0.8$ </tex-math></inline-formula>\u0000% for TID = 0 krad(Si) to \u0000<inline-formula> <tex-math>$mathbf {mathrm {sim }}1$ </tex-math></inline-formula>\u0000% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). The results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID \u0000<inline-formula> <tex-math>$mathbf { > } 100$ </tex-math></inline-formula>\u0000 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"438-446"},"PeriodicalIF":2.0,"publicationDate":"2022-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3515451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects HEMT激发GaN光波导:热应力分析与展望

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-04 DOI: 10.1109/TDMR.2022.3188317

Nagarajan Nallusamy;Rahul Singhal;Sunil Kumar Sharma;Dipendra Singh Rawal

{"title":"HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects","authors":"Nagarajan Nallusamy;Rahul Singhal;Sunil Kumar Sharma;Dipendra Singh Rawal","doi":"10.1109/TDMR.2022.3188317","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3188317","url":null,"abstract":"In this paper, high electron mobility transistor (HEMT) inspired aluminium gallium nitride (AlGaN)/gallium nitride (GaN)/aluminium nitride (AlN) optical waveguides are proposed under thermal stress using silicon (Si), silicon carbide (SiC), and sapphire (Al\u00002\u0000O\u00003\u0000) substrates. The interaction of light with the thermal stress range of 20°C to 700°C is analyzed and an optimized framework design by adjusting the core, cladding, and substrate thicknesses is presented in this work. The study suggests that from the dispersion and confinement loss analysis, the SiC substrate-based GaN HEMT is suitable for high temperature and sensing platforms compared with silicon (Si) and sapphire substrates based HEMTs structure. The thermal stress-induced studies will mainly be utilized for sensing, nonlinear applications like tunable supercontinuum generation and spectroscopy in harsh environments. In addition, waveguide analysis based on HEMT inspired GaN optical waveguide proposed here in an optical domain potentially be used in electro-optical modulator application due to its ability to operate in both electrical and optical domain.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"424-430"},"PeriodicalIF":2.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET 1.7 kv 4H-SiC VDMOSFET单事件烧毁可靠性仿真研究

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-04 DOI: 10.1109/TDMR.2022.3188235

Jia-Hao Luo;Ying Wang;Meng-Tian Bao;Xing-Ji Li;Jian-Qun Yang;Fei Cao

引用次数: 1

Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators 硅光子环调制器金属加热器电迁移性能的改进

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-07-01 DOI: 10.1109/TDMR.2022.3187822

David Coenen;Kristof Croes;Artemisia Tsiara;Herman Oprins;Veerle Simons;Olalla Varela Pedreira;Yoojin Ban;Joris Van Campenhout;Ingrid De Wolf

引用次数: 1

Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022) 探索Si/SiO2 mosfet中随时间变化的介电击穿的原子尺度机制(June 2022)

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-29 DOI: 10.1109/TDMR.2022.3186232

Fedor V. Sharov;Stephen J. Moxim;Gaddi S. Haase;David R. Hughart;Colin G. McKay;Patrick M. Lenahan

{"title":"Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)","authors":"Fedor V. Sharov;Stephen J. Moxim;Gaddi S. Haase;David R. Hughart;Colin G. McKay;Patrick M. Lenahan","doi":"10.1109/TDMR.2022.3186232","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3186232","url":null,"abstract":"We report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO\u00002\u0000 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO\u00002\u0000 interface (\u0000<inline-formula> <tex-math>${ boldsymbol {P}}_{ boldsymbol {b} boldsymbol {0}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${ boldsymbol {P}}_{ boldsymbol {b} boldsymbol {1}}$ </tex-math></inline-formula>\u0000 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as \u0000<inline-formula> <tex-math>$boldsymbol {E}'$ </tex-math></inline-formula>\u0000 centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"322-331"},"PeriodicalIF":2.0,"publicationDate":"2022-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3511261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Cylindrical Indentation to Selectively Stress Nanoscale CMOS Transistors 圆柱压痕选择性应力纳米级CMOS晶体管

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-24 DOI: 10.1109/TDMR.2022.3185930

S. Schlipf;A. Clausner;J. Paul;S. Capecchi;E. Zschech

引用次数: 0

Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation 高速锗光电探测器暗、光电流退化的仿真研究

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-23 DOI: 10.1109/TDMR.2022.3185671

Balraj Arunachalam;Quentin Rafhay;David Roy;Anne Kaminski-Cachopo

引用次数: 2

Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI 自热效应对22FDSOI多指n- mosfet器件可靠性特性的影响

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-16 DOI: 10.1109/TDMR.2022.3183630

Talha Chohan;Zhixing Zhao;Steffen Lehmann;Wafa Arfaoui;Germain Bossu;Jens Trommer;Stefan Slesazeck;Thomas Mikolajick;Mahesh Siddabathula

引用次数: 1

Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density 高电池密度低压沟槽MOSFET中铝扩散失效机理研究

IF 2 3区工程技术

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-16 DOI: 10.1109/TDMR.2022.3183623

Dong Fang;Ming Qiao;Tao Zhong;Kui Xiao;Zheng Bian;Zhaoji Li;Bo Zhang

{"title":"Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density","authors":"Dong Fang;Ming Qiao;Tao Zhong;Kui Xiao;Zheng Bian;Zhaoji Li;Bo Zhang","doi":"10.1109/TDMR.2022.3183623","DOIUrl":"https://doi.org/10.1109/TDMR.2022.3183623","url":null,"abstract":"In this paper, a low-voltage trench metal oxide semiconductor field effect transistor (MOSFET) with high cell density is researched on the process design. The experimental device pitch is reduced to 0.5 \u0000<inline-formula> <tex-math>${mu }text{m}$ </tex-math></inline-formula>\u0000 by three-dimensional (3-D) design of P plus region and self-aligned process, while the contact between silicon and metal is convex rather than the concave in conventional trench MOSFET. BV failure was founded because of the particularity of this structure and the failure is caused by the diffusion of aluminum (Al) into the drift region during the final alloy step in the metal forming process. This paper reveals the mechanism of Al / Silicon (Si) double diffusion and presents the refined surface metal film, which can suppress reverse diffusion and forward diffusion simultaneously. The risk of failure is reduced and functional devices are obtained by the application of the proposed surface metal film. Furthermore, it is recommended to use TiN layers in a total 50 nm as the barrier layer in the metallization process to provide a certain diffusion length and the fabricated device achieves a low specific on-resistance of 3.58 \u0000<inline-formula> <tex-math>$text{m}Omega cdot $ </tex-math></inline-formula>\u0000mm\u00002\u0000 with a corresponding breakdown voltage of 26.2 V eventually.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"403-409"},"PeriodicalIF":2.0,"publicationDate":"2022-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0