Suppression of Total Dose Effects on the Performance of InAlGaN/GaN MIS-HEMT via Field Plate Implementation

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-07-05 DOI:10.1109/TDMR.2024.3422326

Yi-En Chang-Chien;Chin-Han Chung;Chih-Yi Yang;Cheng-Jun Ma;Xiang-You Ye;You-Chen Weng;Edward Yi Chang

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引用次数: 0

Abstract

In this study, quaternary InAlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) aimed for power applications were exposed to 800 krad of Co

$^{60}~\gamma $

-ray, and their response to total dose effects was recorded. For the irradiation process, devices with five gate-connected field plate schemes of field plate length (without field plate,

$2~\mu $

m, 4,

$\mu $

$6~\mu $

$8~\mu $

m) were tested under either a grounded state or a stressed state. It was discovered that the implementation of the field plate could successfully suppress the virtual gate phenomenon exacerbated by total dose effects. Post-irradiation analysis of the reverse characteristics also revealed that for devices irradiated under a stressed state, field plates could increase the device robustness against total dose effects impacting the electrical breakdown.

查看原文本刊更多论文

通过场板实现抑制总剂量对 InAlGaN/GaN MIS-HEMT 性能的影响

在这项研究中，以功率应用为目标的四元InAlGaN/GaN金属绝缘体-半导体高电子迁移率晶体管（MIS-HEMTs）被暴露在800 krad的Co $^{60}~\gamma $射线下，并记录了它们对总剂量效应的响应。在辐照过程中，在接地状态或受压状态下测试了五种栅极连接场板方案的场板长度（无场板、2~\mu $ m、4, $\mu $ m、6~\mu $ m、8~\mu $ m）器件。结果发现，场板的实施可以成功抑制因总剂量效应而加剧的虚门现象。辐照后的反向特性分析也表明，对于在受压状态下辐照的器件，场板可以提高器件的稳健性，防止总剂量效应影响电击穿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.