具有高输出功率和热可靠性的烧结银基直接冷却igbt

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-08-12 DOI:10.1109/TDMR.2025.3598012

Bowen Zhang;Xinyan Lu;Yibin Sun;Youzheng Wang;Yun-Hui Mei

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引用次数: 0

摘要

IGBT模块在DC/AC电源转换过程中产生的热量需要开发高效的直冷散热结构。本文采用烧结银（Ag）作为DBC衬底与散热器之间的热界面材料（TIMs），实现了直冷式igbt。烧结ag - igbt的高热均匀性首先通过有限元模拟得出的热性能差异得到证实。烧结银的传热优势使芯片到散热器的热传导速度快，从而使烧结银- igbt的动态开关损耗降低26%。与SAC 305- igbt相比，在相同的驱动条件下，烧结ag - igbt的输出电流从812 A增加到848 A。由于烧结银的界面热阻较低，烧结银- igbt的平均热阻降低了11.9%，芯片结温平均降低了5.5~^{\circ}$ C。直接冷却igbt的高输出功率和热可靠性有望促进其高功率密度应用。

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Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability

The heat generated by IGBT modules during DC/AC power conversion requires the development of highly efficient direct-cooled thermal dissipation structures. Herein, direct-cooled IGBTs are realized using sintered silver (Ag) as the thermal interface materials (TIMs) between DBC substrate and heat sink. The high thermal homogeneity of Sintered Ag-IGBTs is first confirmed by the thermal performance differences derived from finite element simulations. The heat transfer advantage of sintered Ag enables fast thermal conduction from chip to heat sink, thus reducing the dynamic switching losses of Sintered Ag-IGBTs by 26%. Compared to SAC 305-IGBTs, the output current of Sintered Ag-IGBTs increased from 812 A to 848 A under the same driving conditions. Due to the low interfacial thermal resistance of sintered silver, the average thermal resistance reduction of 11.9% and the average chip junction temperature reduction of

$5.5~^{\circ }$

C are realized in Sintered Ag-IGBTs. The high output power and thermal reliability of direct-cooled IGBTs are expected to facilitate their high-power density applications.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.