Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-07-29 DOI:10.1109/TDMR.2024.3431633

Ruxue Yao;Hongliang Lu;Yuming Zhang;Yutao Zhang;Jing Qiao;Jing Sun;Mingzhu Xun;Gang Yu

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Abstract

Electronic components operating in aerospace environments face a variety of reliability issues. The total ionization dose (TID) degradation mechanism of bulk I/O-FinFETs and the influence of hot carrier degradation (HCD) on TID irradiation are investigated in this paper. Devices under ON/TG/OFF bias conditions were irradiated to 2 Mrad (Si). The nFinFETs show degradation of threshold voltage, subthreshold swing and off-state leakage current. An increase in peak transconductance and on-state current was also observed in the nFinFETs. The TID response of nFinFETs is dominated by positively trapped charges in the gate oxide and shallow trench isolation (STI). For pFinFETs, radiation-induced hole-trapped charges leads to an increase in the threshold voltage and a decrease in the drive current. The worst degradation is observed when a high electric field is applied to the gate during irradiation. Post-stress irradiation results show that the HCD and TID degradation trends of the nFinFETs are opposite and have a mutual canceling effect, while the degradation trends of the pFinFETs are consistent and jointly deteriorate the device performance. Compared to the un-stressed devices, the TID damage of the pre-stressed devices is more drastic, especially for the nFinFETs. The stress-induced interface trapped charges increase the electric field in the gate oxide during subsequent irradiation, which causes more radiation-induced hole-trapped charges and exacerbate TID degradation.

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热载流子衰减对 Bulk I/O-FinFET 总电离剂量的影响

在航空航天环境中运行的电子元件面临着各种可靠性问题。本文研究了块状 I/O-FinFET 的总电离剂量（TID）降解机制以及热载流子降解（HCD）对 TID 辐照的影响。器件在 ON/TG/OFF 偏置条件下受到 2 Mrad（硅）辐照。nFinFET 的阈值电压、阈下摆动和关态漏电流都出现了衰减。在 nFinFET 中还观察到峰值跨导和导通电流的增加。nFinFET 的 TID 响应主要是由栅极氧化物中的正陷落电荷和浅沟道隔离（STI）引起的。对于 pFinFET，辐射诱导的空穴阱电荷导致阈值电压升高，驱动电流降低。在辐照期间对栅极施加高电场时，观察到最严重的劣化现象。应力辐照后的结果表明，nFinFET 的 HCD 和 TID 退化趋势相反，具有相互抵消的效果，而 pFinFET 的退化趋势一致，共同导致器件性能恶化。与无应力器件相比，预应力器件的 TID 损坏更为严重，尤其是 nFinFET。应力诱导的界面捕获电荷会在后续辐照过程中增加栅极氧化物中的电场，从而导致更多辐射诱导的空穴捕获电荷，加剧 TID 退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.