IEEE Transactions on Device and Materials Reliability最新文献

{"title":"A Kalman Filter Method Based on Adaptive Thermal Model for Online Junction Temperature Estimation of SiC MOSFET","authors":"Zehua Fu;Wei Wu;Yong Chen;Zhangyong Chen;Xin Tong;Lehan Xu","doi":"10.1109/TDMR.2025.3570281","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3570281","url":null,"abstract":"Junction temperature <inline-formula> <tex-math>$(T_{j})$ </tex-math></inline-formula> estimation is critical for the health status and reliable operation of SiC MOSFET. Thermal sensitivity electrical parameter (TSEP) method will affect the accuracy of the estimation results due to the measurement conditions, while thermal model method can cause large deviation in the estimation results due to the aging effect of SiC MOSFET. In this paper, a Kalman filter method based on adaptive thermal model is proposed for online <inline-formula> <tex-math>$T_{j}$ </tex-math></inline-formula> estimation of SiC MOSFET. This method proposes the principle of updating the thermal model after device aging, and corrects the model parameter change of SiC MOSFET due to aging in real time by continuously updating the thermal model, and then estimates <inline-formula> <tex-math>$T_{j}$ </tex-math></inline-formula> by combining the TSEP method and the Kalman filter finally. The method not only has the advantages of the TSEP method and the thermal model method, but also can monitor the aging of the device, eliminate the estimation errors generated by the measurement process and inaccurate thermal model, and effectively improve the accuracy and reliability of the online <inline-formula> <tex-math>$T_{j}$ </tex-math></inline-formula> estimation. The experimental results verify the effectiveness of the proposed method.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"557-566"},"PeriodicalIF":2.3,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Electro-Thermal Transport on HCI and BTI Lifetime of Twin Nanowire FETs: Different Operational Modes","authors":"Nitish Kumar;Sankatali Venkateswarlu;Ankur Gupta;Pushpapraj Singh","doi":"10.1109/TDMR.2025.3570616","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3570616","url":null,"abstract":"Nowadays, electro-thermal transport behavior analyzing is important in emerging nanoscale devices because thermal management is a critical issue in improving the device’s performance and cooling strategies. In this article, a comparative study for electro-thermal performance analysis of junctionless and an inversion-mode nanowire gate-all-around (GAA) field-effect transistors (FETs) is presented in advanced technology nodes by considering nonlocal effects. The junctionless device showed ~15.2% better thermal reliability and ~26.7%/37.6% better HCI/BTI lifetime compared to the inversion-mode device. The transient behavior of electro-thermal reliability is also investigated for both devices, where the devices turn on for a short time within a duty cycle, the devices showed better thermal reliability and ~52.8%/68.2% HCI/BTI lifetime improvement. This study also provides strategies for thermal management in advanced node devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"567-573"},"PeriodicalIF":2.3,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Life Prediction of IGBT Across Working Condition via a CNN-Transformer Network","authors":"Shuai Zhu;Maoliang Jian;Xiaoni Yang;Liang Chen;Li Deng;Lianqiao Yang","doi":"10.1109/TDMR.2025.3567107","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3567107","url":null,"abstract":"Insulated Gate Bipolar Transistors (IGBTs) are extensively utilized in a multitude of fields owing to their proficiency in power conversion and their dependable operation. Anticipating the service life of IGBTs to preemptively mitigate the repercussions of device failure, this research advances a novel lifespan forecasting methodology underpinned by a Convolutional Neural Network (CNN) and Transformer hybrid model. The methodology commences with accelerated aging power cycling tests within a range of temperature thresholds, utilizing the Siemens Power Tester to gather aging parameters at disparate junction temperatures. A pivotal observation is the alteration of the saturated voltage drop, VCE(ON), throughout the aging process, which is then harnessed as a critical aging indicator for model training. Following this, the accrued datasets from three distinct groups undergo a rigorous preprocessing phase. Subsequently, the proposed forecasting technique is deployed to predict lifespan across varying operating conditions. The empirical findings underscore that the model introduced in this paper, when predicated on the variations in saturated voltage drop, achieves markedly enhanced predictive fidelity in both single-step and multi-step forecasting scenarios, outperforming alternative comparative methodologies. Especially in single step prediction, the mean values of the coefficient of determination (R2), mean absolute error (MAE), and root mean square error (RMSE) are 0.996, 0.0016 and 0.0026, respectively.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"195-202"},"PeriodicalIF":2.5,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A DICE Flip-Flop Design by Resetting Redundancy Hardening for Single Event Upset Tolerance","authors":"Yaohua Xu;Zeteng Liu;Yi Wang;Na Bai;Ye Liu","doi":"10.1109/TDMR.2025.3570099","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3570099","url":null,"abstract":"The standard cell library forms the foundation of chip design. Conducting rational and efficient radiation-hardening design and performance verification for the library is essential to ensure the safe on-orbit operation of aerospace components. This paper investigates the resettable dual interlocked storage cell (DICE) flip-flop (DICE-FF) from a radiation-hardened cell library and proposes a flip-flop (DICE-REFF) with reset-redundant control circuitry to improve its radiation tolerance. The study examines the effects of Single Event Upset (SEU) both before and after the redundancy hardening of the reset control, identifying sensitive layout regions and critical circuit nodes. Simulations show that the redundancy-hardened DICE-REFF demonstrates strong SEU tolerance, with a Linear Energy Transfer (LET) threshold of 37 MeV/mg/cm2. Additionally, the circuit area increased by only 5% compared to the non-hardened design, with no loss in performance. Additionally, a test chip was designed, and the SEU resistance of the flip-flop was validated through both fault injection and irradiation experiment. The study also explores the impact of different implementation strategies on fault rates.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"501-509"},"PeriodicalIF":2.3,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145050784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography","authors":"Pengyan Wen;Huixin Xiu;Shuming Zhang;Jianping Liu;Yimeng Chen;Hui Yang","doi":"10.1109/TDMR.2025.3569588","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3569588","url":null,"abstract":"Gallium nitride (GaN)-based lasers, spanning emission wavelengths from ultraviolet to green, are widely used as light sources in many application domains. Despite their widespread usage, the comprehensive analysis of atomic-level degradation remains challenging primarily due to limitations in metrology techniques. In this study, we investigated the aging-induced magnesium (Mg) clusters in GaN-based lasers utilizing atom probe tomography. Notably, we have identified Mg clusters of several nanometers in size within the p-type aluminum gallium nitride (p-AlGaN) cladding layer of aged lasers, marking the first observation of such clusters in this context. The presence of Mg clusters induces light scattering and absorption within the cladding layer, contributing to an increase in internal loss and a decrease in slope efficiency. Furthermore, our findings underscore the efficacy of atom probe tomography as a potent technique for conducting atomic-level device failure analysis of semiconductor devices.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"329-334"},"PeriodicalIF":2.5,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion Radiation Effects on the Stability of Hafnium Oxide-Based Ferroelectric Thin Films: Mechanisms and Regulation","authors":"Yujie Fan;Jiawei Liu;Jie Jiang;Li-Mei Jiang","doi":"10.1109/TDMR.2025.3550950","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3550950","url":null,"abstract":"With the advancement of information technology, ferroelectric memories have garnered significant attention due to their non-volatility, high theoretical storage density, low power consumption, and excellent radiation resistance. Hafnium oxide-based ferroelectric materials have a high dielectric constant, a relatively wide bandgap, and good compatibility with CMOS processes, making them suitable for developing the next generation of ferroelectric memories. However, the stability issues hafnium oxide-based ferroelectric thin films face during service, including the wake-up effect and poor polarization retention, hinder the commercialization process of hafnium oxide-based ferroelectric memories developed from these thin films. This paper explores the possibility of optimizing the stability issues of HfO2-based ferroelectric thin films through ion irradiation based on a phase-field model of hafnium oxide-based ferroelectric thin films. The research results show that ion irradiation can effectively weaken the wake-up effect and improve the retention of the thin films. After irradiation with H, He, Fe, and Ar ions, the increase in remanent polarization values of HfO2-based ferroelectric thin films after wake-up was significantly reduced compared to the increase observed in non-irradiated films. Among them, the thin films irradiated with Ar ions showed the smallest increase in remanent polarization after wake-up, at only 9%, while the non-irradiated films exhibited a much higher increase of 260%. Additionally, the ten-year polarization retention efficiencies of the films post-irradiation were also excellent, reaching 95.2%, 93.3%, 92.7%, and 94.5% for H, He, Fe, and Ar ions, respectively. Since Ar ions most effectively reduce the wake-up effect and enhance polarization retention, this study recommends using Ar ions to optimize the stability of hafnium oxide-based ferroelectric thin films. This study provides new insights into optimizing HfO2-based ferroelectric thin films and explores their potential applications in ferroelectric memories.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"314-322"},"PeriodicalIF":2.5,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method","authors":"Zhuoming Liu;Qian Wen;Xianwei Meng;Shijie Pan;Chunsheng Guo;Shiwei Feng;Yamin Zhang;Meng Zhang","doi":"10.1109/TDMR.2025.3569318","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3569318","url":null,"abstract":"The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment results show gate stress, drain stress, and temperature all contribute to threshold voltage shift, with the underlying cause of traps. To obtain physical characteristics of the traps, we test the drain current of the device after filling the traps and utilize a Bayesian iterative deconvolution algorithm to extract the time constants. To accurately explore the impact of traps on the current, we further process the time constant spectrum into a differential amplitude spectrum (DAS), which provides greater precision in addressing the issue of trap amplitudes. We also analyze the variation of trap time constants at different environmental temperatures, and extract the activation energies of the traps in conjunction with the Arrhenius equation. Ultimately, experiments discover two types of electron traps and hole traps.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"323-328"},"PeriodicalIF":2.5,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm","authors":"Peng Dai;Junyi Bao;Zheng Gong;Mingchang Gao;Qing Xu","doi":"10.1109/TDMR.2025.3567650","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3567650","url":null,"abstract":"The insulated gate bipolar transistor (IGBT) has widespread application in energy storage systems, motor drives, smart grids, household appliances and other various fields. These applications demand accurate evaluation of reliability through lifespan prediction to ensure optimal performance and longevity. This study proposes an innovative IGBT lifespan prediction model using an improved dung beetle optimized back propagation neural network (IDBO-BP). The model integrates chebyshev chaotic mapping and golden sine strategy to address critical limitations of existing methods, including low accuracy, poor computational efficiency and weak dynamic adaptability. Chaotic initialization is applied to enhance population diversity and adaptive golden ratio-modulated step sizes are utilized to refine local search precision. This innovative approach delivers breakthroughs in enhancing prediction accuracy and accelerating computation speed without compromising the system’s global exploration capabilities. Besides, a constant case temperature-controlled AC power cycling test protocol was designed to verify the effectiveness of the improved algorithm. This test features suppression of thermal fluctuation interference and the consideration of both conduction losses and switching losses which better simulate real operating conditions. Experimental results demonstrate higher prediction accuracy of the IDBO-BP model compared to DBO-BP, PSO-BP, and GWO-BP. The <inline-formula> <tex-math>${mathrm { R}}^{2}$ </tex-math></inline-formula> values of IDBO-BP model surpass the other methods by an average of 4–27 percentage points respectively. Improved stability of IDBO-BP model is confirmed by lower RMSE values with average error reductions of 9.13–32.1 percentage points, which indicate enhanced robustness in handling nonlinear and fluctuating data for IGBT lifetime prediction.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"341-351"},"PeriodicalIF":2.5,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing","authors":"Sai Gao;Shaoxiang Wang;Jianxiong Yang;Mingxing Du","doi":"10.1109/TDMR.2025.3548979","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3548979","url":null,"abstract":"This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"223-231"},"PeriodicalIF":2.5,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor","authors":"William Cheng-Yu Ma;Chun-Jung Su;Kuo-Hsing Kao;Yu-Chieh Yen;Ji-Min Yang;Yi-Han Li;Yen-Chen Chen;Jhe-Yu Lin;Hui-Wen Chang","doi":"10.1109/TDMR.2025.3548038","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3548038","url":null,"abstract":"Ferroelectric transistors can function as non-volatile memory devices with single-bit, multi-bit, and analog capabilities. State modulation is achieved by programming and erasing with bipolar pulse voltages, while a series of unipolar pulses enable synaptic potentiation and depression. This study examines the effect of pulse voltage stress on the reliability of ferroelectric thin-film transistors (FeTFT) with polycrystalline-silicon (poly-Si) ultra-thin body (UTB) channels. By applying various pulse stresses—bipolar, positive, and negative unipolar—with different pulse widths, we observed distinct degradation behaviors in UTB-FeTFT characteristics. Long bipolar pulse stress caused significant degradation due to the combined effects of the internal electric field from the ferroelectric layer and the external field. In contrast, short bipolar stress led to milder degradation, as lower remnant polarization reduced the total stress field. Rapid changes in electric field direction also limited charge accumulation in the channel, decreasing interface trap generation. Although short bipolar stress had minimal impact on subthreshold swing, it notably degraded maximum transconductance, primarily due to strain in the poly-Si channel’s atomic bonds. Enhancing device reliability is essential for improving FeTFT endurance.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"240-246"},"PeriodicalIF":2.5,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144243641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}