特约编辑 TDMR IIRW 特辑

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-06-20 DOI:10.1109/TDMR.2024.3407548

Charles LaRow

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引用次数: 0

摘要

IEEE 国际集成可靠性研讨会（IIRW）是一项独具特色的活动，它将来自全球各地的可靠性研究人员、专业人士和学生聚集到一个共同的论坛，在四天四夜的时间里进行热烈的讨论、精彩的技术演讲和美丽的风景。活动每年都在美国加利福尼亚州南太浩湖的落叶湖举行，与会者住在一个隐蔽的营地里，那里有非正式的会议场所，还可以乘船、走小路和参加许多其他户外活动。会议内容围绕半导体可靠性研究和行业挑战的热点话题、新技术和常识展开。会议将就晶体管和线路前端 (FEOL) 可靠性、偏置温度不稳定性 (BTI)、热载流子 (HC)、栅极电介质随时间变化的电介质击穿 (TDDB)、线路后端 (BEOL) 可靠性、互连 TDDB、电迁移 (EM)、电路可靠性、封装可靠性、传统和新兴存储器可靠性、故障分析 (FA)、晶圆级可靠性 (WLR) 等主题进行讨论。IIRW 2023 的重点领域是先进节点扩展解决方案（FEOL/MOL/BEOL）、电路可靠性（器件-电路退化和老化）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Guest Editorial TDMR IIRW Special Section

The IEEE International Integrated Reliability Workshop (IIRW) is a distinctive event which brings together reliability researchers, professionals, and students from around the globe to a common forum for lively discussions, wonderful technical presentations, and beautiful scenery for 4 days and nights. The event takes place every year at Fallen Leaf Lake in South Lake Tahoe, CA, USA, where attendees are housed within a secluded camp with informal meeting spaces and access to boats, trails, and many other outdoor activities. The scope of content centers around hot topics in, novel techniques for, and general knowledge on semiconductor reliability research and industry challenges. Talks on transistor and front-end-of-the-line (FEOL) reliability, bias temperature instability (BTI), hot carrier (HC), gate dielectric time-dependent dielectric breakdown (TDDB), back-end-of-the-line (BEOL) reliability, Interconnect TDDB, electro-migration (EM), circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis (FA), wafer-level reliability (WLR), among other topic are presented. The key focus areas at IIRW 2023 were Advanced node scaling solutions (FEOL/MOL/BEOL), circuit reliability (device-circuit degradation and aging).

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.