Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-29 DOI:10.1109/TDMR.2024.3394576

Tommaso Zanotti;Alok Ranjan;Sean J. O’Shea;Nagarajan Raghavan;Ramesh Thamankar;Kin Leong Pey;Francesco Maria Puglisi

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引用次数: 0

Abstract

The development of a robust and secure hardware for the Internet of Things (IoT) and edge computing requires improvements in the existing low-power and low-cost hardware security primitives. Among the various available technologies, true random number generators (TRNGs) that leverage random telegraph noise (RTN) from nanoelectronics devices have emerged as effective solutions. However, the temporal instabilities in the RTN signal, such as the DC drift and temporary inhibition, are a few of the key reliability challenges for the TRNG circuits. In this study, we have utilized experimental RTN data collected from the commonly used gate dielectrics, including silicon dioxide (SiO2), hafnium dioxide (HfO2), and 2D crystalline hexagonal boron nitride (h-BN) to identify the crucial reliability challenges for RTN-based TRNG circuits. We have analyzed the impact of RTN instabilities and of circuit parameters on the output randomness and propose reliability aware design guidelines. Finally, we design and simulate an RTN-based TRNG circuit using a 130 nm CMOS technology and evaluate its reliability at the circuit level.

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基于随机电报噪声的真正随机数生成器设计指南

要为物联网（IoT）和边缘计算开发稳健安全的硬件，就必须改进现有的低功耗、低成本硬件安全基元。在现有的各种技术中，利用纳米电子器件随机电报噪声（RTN）的真随机数发生器（TRNG）已成为有效的解决方案。然而，RTN 信号的时间不稳定性，如直流漂移和暂时抑制，是 TRNG 电路面临的几个关键可靠性挑战。在本研究中，我们利用从二氧化硅（SiO2）、二氧化铪（HfO2）和二维晶体六方氮化硼（h-BN）等常用栅极电介质收集的 RTN 实验数据，找出了基于 RTN 的 TRNG 电路所面临的关键可靠性挑战。我们分析了 RTN 不稳定性和电路参数对输出随机性的影响，并提出了可靠性设计指南。最后，我们使用 130 纳米 CMOS 技术设计并模拟了基于 RTN 的 TRNG 电路，并在电路层面对其可靠性进行了评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.