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IEEE Transactions on Device and Materials Reliability最新文献

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Solder Dewetting and Reliability Challenges in Microbumps Due to NCF Entrapment 由于NCF夹带导致的微凸点焊料脱湿和可靠性挑战
IF 2.3 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3571531
Jihoon Kim;Hyoungrok Lee;Yeonseop Yu;Jungwoo Pyun
{"title":"Solder Dewetting and Reliability Challenges in Microbumps Due to NCF Entrapment","authors":"Jihoon Kim;Hyoungrok Lee;Yeonseop Yu;Jungwoo Pyun","doi":"10.1109/TDMR.2025.3571531","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3571531","url":null,"abstract":"The reliability of solder joints in Cu pillar microbumps is critical for advanced packaging technologies such as 2.5D and 3D integration. As thermocompression (TC) bonding with non-conductive film (NCF) becomes widely adopted, solder dewetting caused by NCF entrapment has emerged as one of major reliability concerns. In this study, we fabricated test vehicles with controlled NCF thickness and viscosity to intentionally induce solder dewetting. These test vehicles underwent multiple reflow cycles or high-temperature storage (HTS) to examine the evolution of dewetting behavior and assess the impact of thermal budget on solder wettability. Through microstructural analysis and dewetting rate measurements, we found that intermetallic compound (IMC) growth played a key role in recurrent dewetting during successive reflows. A modeling approach was proposed to describe how the dewetting rate decreases with increasing reflow cycles due to IMC growth and the size distribution of NCF entrapment. These findings provide insight into failure mechanisms related to solder dewetting and a tool for predicting the reliability of microbump interconnects after multiple reflow cycles during advanced packaging.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"649-653"},"PeriodicalIF":2.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing 诚聘IEEE半导体制造汇刊主编
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3535976
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TDMR.2025.3535976","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3535976","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"173-173"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934108","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29 宣布IEEE/Optica出版集团光波技术杂志特刊：OFS-29
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3551113
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on: OFS-29","authors":"","doi":"10.1109/TDMR.2025.3551113","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551113","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"174-174"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Device and Materials Reliability Information for Authors IEEE器件与材料可靠性信息学报
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3549643
{"title":"IEEE Transactions on Device and Materials Reliability Information for Authors","authors":"","doi":"10.1109/TDMR.2025.3549643","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3549643","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934111","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability 超大规模集成电路和纳米技术系统的缺陷和容错（DFTS 2023）， IEEE器件与材料可靠性学报
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3544351
Luca Cassano;Mihalis Psarakis
{"title":"Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability","authors":"Luca Cassano;Mihalis Psarakis","doi":"10.1109/TDMR.2025.3544351","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3544351","url":null,"abstract":"The ten articles in this special issue present innovative research in the field of defect and fault tolerance in VLSI and nanotechnology systems and provide readers with valuable insights into the latest advances and future trends in these challenging research areas. The focus of these articles is on the reliability in the design, technology and testing of electronic devices and systems, integrated circuits, printed modules, as well as methodologies and tools used for reliability and security prediction, verification and design validation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"2-3"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934089","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Device and Materials Reliability Publication Information IEEE器件与材料可靠性学报
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3549656
{"title":"IEEE Transactions on Device and Materials Reliability Publication Information","authors":"","doi":"10.1109/TDMR.2025.3549656","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3549656","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934086","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics 具有双Snapback特性的弱Snapback硅控整流器ESD器件
IF 2.3 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3571056
Zhong-Xin Wu;Yang Wang;Shuo-Xin Ji;Jun Deng;Zhen-Dong Tang
{"title":"Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics","authors":"Zhong-Xin Wu;Yang Wang;Shuo-Xin Ji;Jun Deng;Zhen-Dong Tang","doi":"10.1109/TDMR.2025.3571056","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3571056","url":null,"abstract":"This paper investigates three Silicon Controlled Rectifier (SCR) devices employing different shunting methods to enhance the holding voltage and prevent latch-up. The operating principles of these devices are analyzed using equivalent circuits and two-dimensional (2D) device simulations, while the device performance is validated through Transmission Line Pulse (TLP) testing and curve tracer characterization. The Weak Snapback SCR (WSSCR), utilizing the third shunting method, achieves the highest holding voltage (Vh) of 7.12 V while maintaining a trigger voltage as low as 8.92 V, fully meeting the 5V ESD design requirements. Meanwhile, during high-temperature and long-pulse-width TLP testing, its Vh remains above 5.5V, meeting the latch-up immunity requirement. The WSSCR exhibits unique double-snapback characteristics. Such feature is explained by analyzing transient waveforms at various points during the TLP test and Technology Computer Aided Design (TCAD) simulations.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"401-409"},"PeriodicalIF":2.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145050782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications 探索令人兴奋的多功能氧化物基电子器件世界：从材料到系统级应用
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3551112
{"title":"Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications","authors":"","doi":"10.1109/TDMR.2025.3551112","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551112","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"177-178"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934109","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide Band Gap Semiconductors for Automotive Applications 汽车用宽带隙半导体
IF 2.5 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-19 DOI: 10.1109/TDMR.2025.3551111
{"title":"Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TDMR.2025.3551111","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3551111","url":null,"abstract":"","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 1","pages":"175-176"},"PeriodicalIF":2.5,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10934110","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143655005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions 高温条件下双π栅AlGaN/GaN hemt的俘获机理和电容色散分析
IF 2.3 3区 工程技术
IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-16 DOI: 10.1109/TDMR.2025.3570841
Rayabarapu Venkateswarlu;Bibhudendra Acharya;Guru Prasad Mishra
{"title":"Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions","authors":"Rayabarapu Venkateswarlu;Bibhudendra Acharya;Guru Prasad Mishra","doi":"10.1109/TDMR.2025.3570841","DOIUrl":"https://doi.org/10.1109/TDMR.2025.3570841","url":null,"abstract":"High-temperature dc and ac capacitance dispersion analysis of the double-<inline-formula> <tex-math>$pi $ </tex-math></inline-formula> gate AlGaN/GaN high electron mobility transistor (HEMT) is simulated to analyze the trapping effects. Self-heating phenomena in electronic devices degrade both performance and lifetime. Self-heating effects (SHE) lead to a rise in channel temperature, which directly impacts the bandgap (EG), mobility of the electrons (<inline-formula> <tex-math>$mu _{e}$ </tex-math></inline-formula>), electron saturation velocity (Vsat), threshold voltage (VTH), breakdown voltage (VBD), transconductance (gm), drain saturation current (IDS), output power (Pout) as well as memory effects and noise performance. To mitigate self-heating effects, a new double-<inline-formula> <tex-math>$pi $ </tex-math></inline-formula> gate HEMT is designed with the gate stem divided into three pillars. This structure redistributes the electric field and reduces phonon scattering. Notably, the device current collapse (CC) percentage drastically decreased when operated at high temperature. Capacitance dispersion is simulated using 2-D TCAD across ambient temperatures ranging from 253°K to 1098°K. Simulation results showed minimal hot electron generation and trapping effects at extreme temperatures. A slight kink effect is observed at temperatures above 773°K for gate stem distances greater than 150 nm.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"574-584"},"PeriodicalIF":2.3,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145027935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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