1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)最新文献

Single event upset characteristics of some digital integrated frequency synthesizers 某些数字集成频率合成器的单事件干扰特性

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816056

L. Dayaratna, S. Seehra, A. Bogorad, L. Ramos

引用次数: 3

Recent radiation damage and single event effect results for microelectronics 微电子学的近期辐射损伤和单事件效应结果

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816042

M. O’Bryan, K. Label, Robert A. Reed, J. W. Howard, Janet L. Barth, C. Seidleck, P. Marshall, Cheryl J. Marshall, Hak S. Kim, D. Hawkins, M. Carts, Kurt E. Forslund

引用次数: 29

Radiation effects in a fixed-point digital signal processor 定点数字信号处理器中的辐射效应

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816053

S. Crain, R. Velazco, M. T. Alvarez, A. Bofill, P. Yu, R. Koga

引用次数: 5

A high performance Rad hard 2-3 GHz integer N CMOS phase lock loop 一种高性能Rad硬2-3 GHz整数N CMOS锁相环

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816055

G. Lyons, G. Wu, T. Mellissinos, J. Cable

引用次数: 7

High energy electron testing of silicon and GaAs/Ge solar cells 硅和砷化镓/锗太阳能电池的高能电子测试

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816064

K. B. Miller, C. O'Quinn

引用次数: 0

A radiation-hardened cold sparing input/output buffer manufactured on a commercial process line 在商业生产线上生产的抗辐射冷保护输入/输出缓冲器

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816060

J. Benedetto, A. Jordan

引用次数: 3

Components testing for HESSI satellite APECTS module HESSI卫星APECTS模块组件测试

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816061

W. Hajdas, J. Bialkowski, M. Fivian, R. Henneck, A. Mchedlishvili, E. Sturcke, K. Thomsen, A. Zehnder

引用次数: 2

The effects of space radiation and burn-in on plastic encapsulated semiconductors 空间辐射和老化对塑料封装半导体的影响

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816062

J. Wall, R. Sharp, L. Pater

引用次数: 8

Single-event upset test results for the Xilinx XQ1701L PROM Xilinx XQ1701L PROM的单事件破坏测试结果

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816054

S. Guertin, G. Swift, D. Nguyen

引用次数: 7

Total-dose tolerance of a chartered semiconductor 0.35-/spl mu/m CMOS process 特许半导体0.35-/spl μ m CMOS工艺的总剂量容限

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI: 10.1109/REDW.1999.816059

R. Lacoe, J. V. Osborn, D. C. Mayer, S. C. Witczak, S. Brown, R. Robertson, D.R. Hunt

{"title":"Total-dose tolerance of a chartered semiconductor 0.35-/spl mu/m CMOS process","authors":"R. Lacoe, J. V. Osborn, D. C. Mayer, S. C. Witczak, S. Brown, R. Robertson, D.R. Hunt","doi":"10.1109/REDW.1999.816059","DOIUrl":"https://doi.org/10.1109/REDW.1999.816059","url":null,"abstract":"MOSFETs fabricated in the commercial Chartered Semiconductor 0.35-/spl mu/m CMOS process were characterized with respect to the effects of total dose irradiation. Gate oxide threshold voltage shifts at 100 krad(Si) for both minimum geometry 0.70/0.35 NMOS and PMOS transistors biased for worst-case shifts were less than 20 mV. Off-state field leakage currents for isolated NMOS transistors were below 10 nA at 100 krad(Si), but became large at 300 krad(Si). The effect of a post-irradiation high temperature anneal was to lower these leakage currents to less than 100 pA. PMOS transistors exhibited less than 10 pA leakage for doses up to 300 krad(Si). Measurements on edgeless annular NMOS transistors showed no significant increase in leakage current with total dose, indicating that the increased leakage observed in standard NMOS transistors is the result of field leakage associated with inversion in the bird's beak region at the transistor/field oxide interface. C-V measurements on field-oxide capacitors over substrate biased for worst-case threshold voltage shifts showed the capacitors did not invert at 100 krad(Si) for 3.3 V operation. Measurements on ring-oscillators biased dynamically during irradiation showed no significant change in the gate delay or power up to 300 krad(Si) total dose, suggesting that for actual digital circuits applications, functionality and performance may be able to be maintained to doses substantially above 100 krad(Si).","PeriodicalId":447869,"journal":{"name":"1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130669628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19