The effects of space radiation and burn-in on plastic encapsulated semiconductors

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816062

J. Wall, R. Sharp, L. Pater

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引用次数: 8

Abstract

Burn-in, gamma irradiation (Cobalt 60) total dose effects (at dose rates of 0.002, 0.05 and 50 rad/s) and proton irradiation (at energies of 1 and 10 MeV) on bipolar and MOSFET transistors in plastic and ceramic packages are assessed. Practical considerations prevented the 0.002 rad/s irradiation being taken to the same total dose as the 0.05 and 50 rad/s irradiations, but that achieved was sufficient to enable comparisons to be made. The Cobalt 60 low dose rate effect was observed in all of the ceramic packaged devices, with and without burn-in. The plastic packaged devices displayed a reduced Cobalt 60 dose rate sensitivity and burn-in was found to reduce dose rate related effects for plastic packaged devices. The 1 MeV proton irradiation did not demonstrate any degradation whereas the 10 MeV irradiation showed significant degradation for the ceramic packaged devices compared with little, if any, degradation for the plastic packaged devices. Burn-in did not affect the susceptibility to proton irradiation induced degradation.

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空间辐射和老化对塑料封装半导体的影响

对塑料和陶瓷封装的双极晶体管和MOSFET晶体管进行了烧伤、伽马辐射(钴60)总剂量效应(剂量率分别为0.002、0.05和50 rad/s)和质子辐射(能量分别为1和10 MeV)评估。考虑到实际情况，0.002 rad/s的辐照不能与0.05 rad/s和50 rad/s的辐照达到相同的总剂量，但达到的剂量足以进行比较。在所有的陶瓷封装器件中观察到钴60低剂量率效应，有无烧坏。塑料包装的设备显示出降低的钴60剂量率敏感性，并且发现烧伤降低了塑料包装设备的剂量率相关效应。1 MeV的质子辐照没有显示出任何降解，而10 MeV的辐照对陶瓷封装器件显示出明显的降解，而对塑料封装器件则几乎没有降解。老化不影响质子辐照诱导降解的敏感性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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