Single-event upset test results for the Xilinx XQ1701L PROM

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816054

S. Guertin, G. Swift, D. Nguyen

引用次数: 7

Abstract

A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm/sup 2/ and a saturated cross-section of 10/sup -5/ cm/sup 2/. Three types of upsets were measured: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt.

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Xilinx XQ1701L PROM的单事件破坏测试结果

3.3 V串行PROM用于配置先进的Xilinx fpga，测试了重离子的单事件效应。器件闭锁的LET阈值为55 MeV / mg/cm/sup 2/，饱和截面为10/sup -5/ cm/sup 2/。测量了三种类型的干扰:(1)地址错误，(2)过早的程序结束信号，(3)功能中断。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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