A high performance Rad hard 2-3 GHz integer N CMOS phase lock loop

G. Lyons, G. Wu, T. Mellissinos, J. Cable
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引用次数: 7

Abstract

We report here on the performance of a 2-3 GHz Phase Lock Loop (PLL) designed specifically for commercial space applications requiring low power dissipation, very good phase noise, good temperature stability, excellent SEE tolerance, and little degradation over a 100 kRad(Si) total dose exposure. The device is built in a 0.5 /spl mu/m fully depleted ultra thin silicon on sapphire technology (UTSi). Product level radiation data is presented showing performance as a function of total dose. Following gamma exposures to 100 kRad(Si), the device shows an integrated phase noise of less than 0.8 degree for 2.18 GHz operation for frequency step sizes of 1 MHz. This is a performance level exceeding all known integrated PLL's currently in the commercial marketplace.
一种高性能Rad硬2-3 GHz整数N CMOS锁相环
我们在此报告了专为商业空间应用而设计的2-3 GHz锁相环(PLL)的性能,该应用要求低功耗,非常好的相位噪声,良好的温度稳定性,出色的SEE耐受性,并且在100 kRad(Si)总剂量暴露下几乎没有退化。该器件采用0.5 /spl μ l /m全耗尽超薄蓝宝石上硅技术(UTSi)制造。产品水平辐射数据显示性能作为总剂量的函数。在100 kRad(Si)的伽马照射下,该器件在2.18 GHz工作时显示出小于0.8度的集成相位噪声,频率步长为1 MHz。这是一个性能水平超过所有已知的集成锁相环目前在商业市场上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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