某些数字集成频率合成器的单事件干扰特性

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816056

L. Dayaratna, S. Seehra, A. Bogorad, L. Ramos

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引用次数: 3

摘要

频率产生电路可以用数字集成电路频率合成器设计，其中包含锁相环。目前存在许多ECL, Bi-CMOS和CMOS-SOS技术的电路，使得开发频率高达2.5 GHz及以上的系统更容易。介绍了美国国家半导体公司(LMX2315)、Peregrine公司(PE3282A)和Mitel公司(SP8855和SP8858)的数字频率合成器的单事件干扰(SEU)特性。根据器件技术和制造工艺的不同，扰流率可能很大，因此可能不适合高可靠性的空间应用。

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Single event upset characteristics of some digital integrated frequency synthesizers

Frequency generation circuits can be designed by using digital integrated circuit frequency synthesizers containing phase locked loops. Many circuits in ECL, Bi-CMOS and CMOS-SOS technology presently exist, making it easier to develop systems with frequencies up to 2.5 GHz and beyond. Single Event Upset (SEU) characteristics of digital frequency synthesizers from National Semiconductor (LMX2315), Peregrine (PE3282A) and Mitel (SP8855 and SP8858) are presented. Depending upon the device technology and manufacturing process, the upset rate can be significant that they may not be suitable for high reliability space applications.

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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