硅和砷化镓/锗太阳能电池的高能电子测试

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816064

K. B. Miller, C. O'Quinn

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引用次数: 0

摘要

用20 MeV、40 MeV和60 MeV的电子对硅和GaAs/Ge太阳能电池进行了测试，以确定位移损伤效应。据文献报道，硅电池的降解与非电离能量损失(NIEL)呈线性关系。发现GaAs/Ge降解与最大功率的NIEL成线性比例，与开路电压(Voc)的NIEL的平方根成线性比例。发现短路电流的衰减与电子能量无关。

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High energy electron testing of silicon and GaAs/Ge solar cells

Silicon and GaAs/Ge solar cells were tested with 20 MeV, 40 MeV, and 60 MeV electrons to determine the displacement damage effects. Silicon cell degradation is linear with Non-Ionizing Energy Loss (NIEL) as reported in the literature. GaAs/Ge degradation was found to scale linearly with NIEL for the maximum power and as the square root of the NIEL for the open circuit voltage (Voc). The short circuit current degradation was found to be independent of electron energy.

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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