Xilinx XQ1701L PROM的单事件破坏测试结果

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816054

S. Guertin, G. Swift, D. Nguyen

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引用次数: 7

摘要

3.3 V串行PROM用于配置先进的Xilinx fpga，测试了重离子的单事件效应。器件闭锁的LET阈值为55 MeV / mg/cm/sup 2/，饱和截面为10/sup -5/ cm/sup 2/。测量了三种类型的干扰:(1)地址错误，(2)过早的程序结束信号，(3)功能中断。

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Single-event upset test results for the Xilinx XQ1701L PROM

A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm/sup 2/ and a saturated cross-section of 10/sup -5/ cm/sup 2/. Three types of upsets were measured: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt.

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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