Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting最新文献

{"title":"Low power consuming BiCMOS single-ended VCO for wireless LAN at C-band","authors":"G. von Buren, F. Ellinger, L. Rodoni, H. Jackel","doi":"10.1109/BIPOL.2004.1365792","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365792","url":null,"abstract":"A low power consuming voltage controlled oscillator (VCO) at C-band frequencies is presented in this paper. With a supply voltage of 1.2 V and a current consumption of 1.8 mA, an output power of -3.5 dBm, an efficiency of 15 % and a phase noise of -110 dBc/Hz are achieved. Varying the tuning voltage horn 0 V to the supply voltage results in a tuning range of 400 MHz with a center frequency of 4.8 G H z With a tuning voltage from -0.5 to 5 V a tuning range of 1.1 GHz is possible. The fully integrated circuit is fabricated on a commercial 0.25 pm BiCMOS technology.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131087819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adaptive biasing for UMTS power amplifiers","authors":"G. Grillo, D. Cristaudo","doi":"10.1109/BIPOL.2004.1365776","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365776","url":null,"abstract":"An innovative technique for the biasing of power amplifiers (PAs) is presented that allows reduction of the DC power consumption, especially when the PA is operated at mid/low output power, without compromising the linearity at high output power level. The fully integrated adaptive biasing circuit, in 0.5 /spl mu/m BICMOS technology, senses the operating PA power and adjusts its quiescent current accordingly. The method is applied to a UMTS PA, resulting in a power consumption saving of about 70% when compared to conventional biasing solutions.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114267811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inverse circuit simulation based low-frequency noise extraction in SiGe HBTs","authors":"G. Niu, Jin Tang, Zhiming Feng, D. Sheridani, D.L. Haramel","doi":"10.1109/BIPOL.2004.1365785","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365785","url":null,"abstract":"Transistor low-frequency noise is an important issue in both base hand and RF circuits of a wireless transceiver [I]. In a bipolar transistor, the major low-frequency noise source lies in the base current. Experimentally, it bas been established that this hase current noise source is located between the internal base and emitter nodes in an equivalent circuit [I]. This base current low-frequency noise, denoted as ibn. is often measured indirectly from the collector voltage noise by presenting to the transistor base a Source impedance much greater than the input impedance, as shown in Fig. 1. The measured collector voltage noise is converted to collector current noise using SI, = SVc/Ri,e88' which is then converted to the base current noise using SI , = . Y ~ ~ / f l , $ with Bo, being the low-frequency small signal oc current gain. Bo, is often determined from Gummel characteristics measured under a biasing condition close to that used in the noise measurement. We note that the hase current noise can also be measured \"dtrectly\" from the base using a high precision current amplifier with an input impedance much lower than transistor input impedance. Each method has its advantages and disadvantages in practice, as discussed in [I] . In general, the indirect method is easier to implement, and widely used. We focus on the indirect method in this work. Similar limitations and assumptions exist in the \"direct\" measurement method as well. The widely used conventional measurement method, however, is based on a simplified equivalent circuit derived under isothermal condition. While in modem SiGe HBTs, self-heating can be significant, in part due to high operating current density. To enable high current density operation, the collector doping is increased with device scaling, which then increases collector-base junction field and thus avalanche multiplication. One can therefore expect errors in the low-frequency noise measured using the conventional method in high speed SiGe HBTs. The purpose of this work is to develop a new method -","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125576683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-voltage SiC and GaN power devices","authors":"T. Chow","doi":"10.1109/BIPOL.2004.1365780","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365780","url":null,"abstract":"Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124754003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SiGe bipolar technology for automotive radar applications","authors":"J. Bock, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, Herbert Knapp, M. Wurzer, W. Perndl, T. Bottner, T. Meister","doi":"10.1109/BIPOL.2004.1365751","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365751","url":null,"abstract":"A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116280487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO","authors":"J. Zhan, J. S. Duster, Kevin T. Kornegay","doi":"10.1109/BIPOL.2004.1365746","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365746","url":null,"abstract":"A 7.3-GHz, 55%-tuning-range active inductor VCO fabricated in an IBM 6HP SiGe BiCMOS process is presented. It occupies an area of 165 /spl mu/m/spl times/335 /spl mu/m and draws 15 mA of DC current from a 3.6 V supply to provide -74 dBc/Hz of phase noise at a 1 MHz offset.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124551462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of device geometry on DC, AC and SOA of high speed ffv bipolar transistors","authors":"R. Dutta, T. Krutsick, J. Siket","doi":"10.1109/BIPOL.2004.1365807","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365807","url":null,"abstract":"Detailed characterizations were performed to evaluate the influence of device geometry on the L X , AC and SOA performances of power bipolar transistors. Appropriate performance indices normalized to total device area were defmed, leading to recommendation of a novel baseemitter geometry for optimal performance. Their implementation resulted in significant reduction in silicon area for both NPN and PNP.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124874438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications","authors":"L. Lanzerotti, N. Feilchenfeld, D. Coolbaugh, James A. Slinkman, P. Gray, David C. Sheridan, J. Higgins, W. Hodge, M. Gordon, T. Larsen, M. Gautsch, P. Lindgren, R. Murty, J. Rascoe, Kimball M. Watson, T. Stamper, E. Eshun, J. He, K. Downes, R. Rassel, J. Greco, B. Labelle, S. Sweeney, Kenneth J. Stein, R. Bolam, K. Vaed, B. Omer, Alvin J. Joseph, S. S. Onge, J. Dunn","doi":"10.1109/BIPOL.2004.1365789","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365789","url":null,"abstract":"We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129257466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A low-IF bipolar double-quadrature mixer exhibiting 53 dB of image rejection [TV tuner application]","authors":"M. Notten, J. van Sinderen","doi":"10.1109/BIPOL.2004.1365762","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365762","url":null,"abstract":"This paper presents a bipolar double quadrature mixer with more than 53 dB of image rejection and consuming 115 mW. This IC has been developed to reduce the power consumption in a fully integrated low-IF TV tuner.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129413554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Technique for measuring base-emitter misalignment using split base structure [HBT]","authors":"C. Cismaru, Ching-Hua Li, P. Zampardi","doi":"10.1109/BIPOL.2004.1365738","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365738","url":null,"abstract":"We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115256549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}