SiGe bipolar technology for automotive radar applications

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365751

J. Bock, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, Herbert Knapp, M. Wurzer, W. Perndl, T. Bottner, T. Meister

引用次数: 173

Abstract

A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.

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用于汽车雷达的SiGe双极技术

一种用于77 GHz左右汽车雷达应用的SiGe双极技术已经开发出来。截止频率为200 GHz，最大振荡频率为275 GHz，门延迟为3.5 ps。该技术已经实现了77 GHz系统(如vco和混频器)的第一个关键构建模块。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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