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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting最新文献

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Impact of profile design and scaling on large signal performance of SiGe HBTs 外形设计和缩放对SiGe hbt大信号性能的影响
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365782
Jun Pan, G. Niu, A. Joseph, D. Harame
{"title":"Impact of profile design and scaling on large signal performance of SiGe HBTs","authors":"Jun Pan, G. Niu, A. Joseph, D. Harame","doi":"10.1109/BIPOL.2004.1365782","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365782","url":null,"abstract":"This paper experimentally investigates the large signal performance of SiGe HBTs, including the impact of SiGe profile, breakdown voltage-speed tradeoff, and technology scaling. An inevitable tradeoff between optimum small signal gain/noise performance and large signal linearity is identified, and implications for profile optimization are established. Besides the expected small signal performance improvement, the 200 GHz SiGe technology shows an impressive large signal performance with a 36% power added efficiency at 20 GHz without any matching network for a supply voltage of only 1.1 V.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125783804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
System design of chip and board level optical interconnects 片板级光互连系统设计
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365749
D. Plant
{"title":"System design of chip and board level optical interconnects","authors":"D. Plant","doi":"10.1109/BIPOL.2004.1365749","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365749","url":null,"abstract":"Recently a number of successful freespace chip-to-chip and board-to-board optical interconnects have been demonstrated. Here we present some of the results that can be derived as a result of this work.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114140446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaAs HBT for power applications [power amplifier applications] 用于功率应用的GaAs HBT[功率放大器应用]
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365743
O. Berger
{"title":"GaAs HBT for power applications [power amplifier applications]","authors":"O. Berger","doi":"10.1109/BIPOL.2004.1365743","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365743","url":null,"abstract":"The TriQuint HBT process is based on InGaP/GaAs with 2 /spl mu/m or 3 /spl mu/m emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F/sub T/ and F/sub max/ of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW//spl mu/m/sup 2/ are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes 低压BiCMOS工艺中高容压引脚的ESD保护
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365799
V. Vashchenko, M. ter Beek, W. Kindt, P. Hopper
{"title":"ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes","authors":"V. Vashchenko, M. ter Beek, W. Kindt, P. Hopper","doi":"10.1109/BIPOL.2004.1365799","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365799","url":null,"abstract":"A methodology. for achieving ESD devices by increasing the breakdown voltage of the protection of high voltage pins in a low voltage blocking junctions for ESD devices in 0.5pm technology is presented. The methodology utilizes eilicient mask level control of both the blocking BiCMOS and CMOS processes. lr Hlgh Voltage junction and the triggering characteristics of the *5v . .. . . . t.. . .. . , ESD devices without the addition or chance in anv -. process steps. The methodology was validated by numerical simulation and experimental measurements for the case of dualdirection SOV tolerant onship ESD protection of thin fh resistors in a N BiCMOS process. The methodology was also applied to the case of tnrnon voltage increase of an extended drain SCR ESD protection device in a 5V CMOS process.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116421934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Design of a new RF BIST circuit for 5.25GHz low noise amplifiers 5.25GHz低噪声放大器的新型射频BIST电路设计
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365794
J. Ryu, D. Kadam, T. Alex, B.C. Kim
{"title":"Design of a new RF BIST circuit for 5.25GHz low noise amplifiers","authors":"J. Ryu, D. Kadam, T. Alex, B.C. Kim","doi":"10.1109/BIPOL.2004.1365794","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365794","url":null,"abstract":"This paper presents a new low-cost RF Built-In condition will be highly beneficial to rectification of RF signals. Self-Test (BIST) circuit for measuring input impedance, To reduce the output ripple voltage, ROT and C O ~ are chosen with eansducer voltage gain, noise figure, and input return loss of large values. 5.25GHz IOW noise amplifier (LNA). The BIST circuit is ............................................................................................. designed using 0.18pm SiGe technology. The test technique using BIST circuit utilizes input impedance matching and output transient voltage measurements. The technique is simple and inexpensive.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127475499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics 关于SiGe HBTs在高温(至300/spl度/)电子器件中的适用性
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365784
Tianbing Chen, W.-M.L. Kuo, E. Zhao, Q. Liang, Z. Jin, J. Cressler, A. Joseph
{"title":"On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics","authors":"Tianbing Chen, W.-M.L. Kuo, E. Zhao, Q. Liang, Z. Jin, J. Cressler, A. Joseph","doi":"10.1109/BIPOL.2004.1365784","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365784","url":null,"abstract":"The first comprehensive investigation of the high-temperature operation of SiGe HBTs is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129165922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
SiGe technology requirements for millimeter-wave applications 毫米波应用的SiGe技术要求
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365750
P. Wennekers, R. Reuter
{"title":"SiGe technology requirements for millimeter-wave applications","authors":"P. Wennekers, R. Reuter","doi":"10.1109/BIPOL.2004.1365750","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365750","url":null,"abstract":"This paper provides an overview, in which SiGe-HBT device and process features are important from a designer's point of view, to enable successful circuit implementations at mm-wave frequencies.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133176086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design methodology of feedback-LNAs for GHz applications 用于GHz应用的反馈lna设计方法
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365793
A. Liscidini, M. Brandolini, P. Rossi, F. Torrisi, F. Svelto
{"title":"Design methodology of feedback-LNAs for GHz applications","authors":"A. Liscidini, M. Brandolini, P. Rossi, F. Torrisi, F. Svelto","doi":"10.1109/BIPOL.2004.1365793","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365793","url":null,"abstract":"~ The design strategy leading to common-base, high linearity feedback-LNAs is proposed. A narrow-band frequency tunable solution and a broad-band one have been designed. Two zero-IF front-ends realized for IEEE 802.11a, HiperLAN2, and HiSWANa including variablegain mixers, show: 2.5dB NF, -9.5dBm IIp3, and 3.4dB NF, -6dBm IIp3 respectively. multistandard wireless LAN applications have been fabricated in a 0.25pm SiGe BiCMOS technology. The first prototype consists of an LNA covering more than lGHz band, by means of 8 tuneable LC narrowhands, followed by quadrature mixers. Measured results, reported in 121, are 2.SdB NF, -9.SdBm IIP3 with a current consumption of 16mA from a 2.5V supply. The second prototype differs for the LNA, which is broad-band. The broad input matching and","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123638845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology 采用GaAs HBT技术的调制器驱动应用的40gbps宽带放大器
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365800
C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich
{"title":"A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology","authors":"C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich","doi":"10.1109/BIPOL.2004.1365800","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365800","url":null,"abstract":"A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114947880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The future of complementary bipolar 未来的互补双极
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365736
D. Monticelli
{"title":"The future of complementary bipolar","authors":"D. Monticelli","doi":"10.1109/BIPOL.2004.1365736","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365736","url":null,"abstract":"New applications with a need for simultaneous wide bandwidth, high output drive, and exceptional symmetry have spawned new advances in an old technology, complementary bipolar. This paper briefly covers its history and applications, then goes on to describe the circuits and modern processes that have recently appeared. The paper concludes with a look ahead at technical trends and new challenges.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121050729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
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