{"title":"用于功率应用的GaAs HBT[功率放大器应用]","authors":"O. Berger","doi":"10.1109/BIPOL.2004.1365743","DOIUrl":null,"url":null,"abstract":"The TriQuint HBT process is based on InGaP/GaAs with 2 /spl mu/m or 3 /spl mu/m emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F/sub T/ and F/sub max/ of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW//spl mu/m/sup 2/ are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"GaAs HBT for power applications [power amplifier applications]\",\"authors\":\"O. Berger\",\"doi\":\"10.1109/BIPOL.2004.1365743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The TriQuint HBT process is based on InGaP/GaAs with 2 /spl mu/m or 3 /spl mu/m emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F/sub T/ and F/sub max/ of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW//spl mu/m/sup 2/ are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365743\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs HBT for power applications [power amplifier applications]
The TriQuint HBT process is based on InGaP/GaAs with 2 /spl mu/m or 3 /spl mu/m emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F/sub T/ and F/sub max/ of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW//spl mu/m/sup 2/ are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.
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