Impact of profile design and scaling on large signal performance of SiGe HBTs

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365782

Jun Pan, G. Niu, A. Joseph, D. Harame

引用次数: 5

Abstract

This paper experimentally investigates the large signal performance of SiGe HBTs, including the impact of SiGe profile, breakdown voltage-speed tradeoff, and technology scaling. An inevitable tradeoff between optimum small signal gain/noise performance and large signal linearity is identified, and implications for profile optimization are established. Besides the expected small signal performance improvement, the 200 GHz SiGe technology shows an impressive large signal performance with a 36% power added efficiency at 20 GHz without any matching network for a supply voltage of only 1.1 V.

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外形设计和缩放对SiGe hbt大信号性能的影响

本文通过实验研究了SiGe HBTs的大信号性能，包括SiGe轮廓、击穿电压速度权衡和技术缩放的影响。确定了最佳小信号增益/噪声性能和大信号线性之间的不可避免的权衡，并确定了对剖面优化的影响。除了预期的小信号性能改进之外，200 GHz SiGe技术在20 GHz下显示了令人印象深刻的大信号性能，在没有任何匹配网络的情况下，电源电压仅为1.1 V，功率增加了36%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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