C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich
{"title":"采用GaAs HBT技术的调制器驱动应用的40gbps宽带放大器","authors":"C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich","doi":"10.1109/BIPOL.2004.1365800","DOIUrl":null,"url":null,"abstract":"A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"283 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology\",\"authors\":\"C. Meliani, M. Rudolph, J. Hilsenbeck, W. Heinrich\",\"doi\":\"10.1109/BIPOL.2004.1365800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"283 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 40 Gbps broadband amplifler for modulator- driver applications using a GaAs HBT technology
A broadband amplifier suitable for high-bitrate modulator driver applications is fabricated using a GaAs-HBT process with f r and fmu of 45 and I 7 0 GHr, respectively. The design takes optimum advantage of the available technology, to obtain a broadband gain of 12 dB and a 3dB cut-off-frequency of 24 GHL A smooth decrease around f c is chosen in order to keep a positive gain value at higher frequencies and a relatively frat group delay, which is a key condition for the eye-diagram opening. This appears to be the best way to combine high bitrate signal amplification with sujj7ciently high output voltage for a relatively low f r HBT technology, compared to others, as InP HEMT or GaAs pHEMT. According to the NRZ power spectra, 40 Gb/s signal amplification is possible with such characteristics since the smooth slope condition is fulfilled. Eye diagram measurements at 40 Gb/s with several input signal swings are presented A 4 Vpp output well-opened 40 Gb/s eye diagram is obtained with a large signalgain of 12 dB. This is a promising resuit for 40 Gb/s modulator driver applications using low-cost standard technologies and an interesting perfomiance in terms of a marimurn broadband5 to (f7, fnp3 ratio.