{"title":"SiGe technology requirements for millimeter-wave applications","authors":"P. Wennekers, R. Reuter","doi":"10.1109/BIPOL.2004.1365750","DOIUrl":null,"url":null,"abstract":"This paper provides an overview, in which SiGe-HBT device and process features are important from a designer's point of view, to enable successful circuit implementations at mm-wave frequencies.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper provides an overview, in which SiGe-HBT device and process features are important from a designer's point of view, to enable successful circuit implementations at mm-wave frequencies.