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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting最新文献

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A 5-GHz silicon bipolar radio transceiver front-end 一个5 ghz硅双极无线电收发器前端
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365760
A. Italia, E. Ragonese, L. La Paglia, G. Palmisano
{"title":"A 5-GHz silicon bipolar radio transceiver front-end","authors":"A. Italia, E. Ragonese, L. La Paglia, G. Palmisano","doi":"10.1109/BIPOL.2004.1365760","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365760","url":null,"abstract":"A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-f/sub T/ pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130011111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
3-port characterization of differential inductors 差动电感的三端口特性
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365797
Z. Huszka
{"title":"3-port characterization of differential inductors","authors":"Z. Huszka","doi":"10.1109/BIPOL.2004.1365797","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365797","url":null,"abstract":"The compilation of n-pon small signal paramerer matrices is described from 2-pon VNA measuremenrs with the unused porrs lefr open. Multiport deembedding rechnique and a novel compact model are suggested and verified for differential inducrors.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132084414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Investigation of advanced SiGe heterojunction bipolar transistors at high power densities 高功率密度先进SiGe异质结双极晶体管的研究
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365755
M. Pfost, P. Brenner, R. Lachner
{"title":"Investigation of advanced SiGe heterojunction bipolar transistors at high power densities","authors":"M. Pfost, P. Brenner, R. Lachner","doi":"10.1109/BIPOL.2004.1365755","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365755","url":null,"abstract":"In this paper, we investigate the behavior of advanced SiGe HBTs operating at very high power densities. Measurement results are presented and explained using a model that considers both impact ionization and self-heating. It is shown that even for small transistors, the temperature difference between the center and the ends of the emitter finger causes a significantly more nonuniform current density than expected solely from impact ionization. This requires special attention because the high temperatures that result from very large current densities can degrade the device lifetime.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130561426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Micro/nano technology: a solution for next generation multi-function integrated systems 微纳米技术:下一代多功能集成系统的解决方案
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365781
G. Li
{"title":"Micro/nano technology: a solution for next generation multi-function integrated systems","authors":"G. Li","doi":"10.1109/BIPOL.2004.1365781","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365781","url":null,"abstract":"The unprecedented technology advancements in miniaturizing integrated circuits, and the resulting plethora of sophisticated, low cost electronic devices demonstrate the impact that micro/nano scale engineering can have when applied only to the area of electrical and computer engineering. Current research efforts in micro/nano fabrication technology for implementing integrated systems hope to yield similar revolutions in engineering fields of biomedical, mechanical, chemical, optical, fluidic, civil and environmental. The integrated system technology requires the integration of multiple materials, phenomena, technologies, and functions at micro/nano scales. By cross linking the individual engineering fields through micro/nano technology, various miniaturized system components have been developed at UCI that will have future impacts in the application markets such as medicine, healthcare, and telecommunications.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz f/sub T/ 太赫兹f/sub /波段纳米级SiGe HBTs垂直剖面设计与传输时间分析
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365783
Yun Shi, G. Niu
{"title":"Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz f/sub T/","authors":"Yun Shi, G. Niu","doi":"10.1109/BIPOL.2004.1365783","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365783","url":null,"abstract":"We present a nano-scale SiGe HBT design for above Terahertz f/sub T/. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz/spl middot/V f/sub T//spl times/BV/sub CEO/ is shown in simulations using the graded Ge profile.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123113187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Ratio based direct extraction of small-signal parameters for SiGe HBTs 基于比例的SiGe HBTs小信号参数直接提取
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365765
K. Xia, G. Niu, D. Sheridan, W. Ansley
{"title":"Ratio based direct extraction of small-signal parameters for SiGe HBTs","authors":"K. Xia, G. Niu, D. Sheridan, W. Ansley","doi":"10.1109/BIPOL.2004.1365765","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365765","url":null,"abstract":"A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114136775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Advanced Si and SiGe strained channel NMOS and PMOS transistors with high-k/metal-gate stack 具有高k/金属栅堆叠的先进Si和SiGe应变沟道NMOS和PMOS晶体管
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365778
S. Datta, J. Brask, G. Dewey, M. Doczy, B. Doyle, Ben Jin, J. Kavalieros, M. Metz, A. Majumdar, M. Radosavljevic, R. Chau
{"title":"Advanced Si and SiGe strained channel NMOS and PMOS transistors with high-k/metal-gate stack","authors":"S. Datta, J. Brask, G. Dewey, M. Doczy, B. Doyle, Ben Jin, J. Kavalieros, M. Metz, A. Majumdar, M. Radosavljevic, R. Chau","doi":"10.1109/BIPOL.2004.1365778","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365778","url":null,"abstract":"Sustaining Moore's Law of scaling Si CMOS transistors requires not only shrinking the transistor dimensions, but also the introduction of new materials and structures. In the future, advanced high performance CMOS transistors are likely to incorporate highly strained Si and SiGe channels for enhanced carrier transport and high-k/metal-gate stacks for low gate leakage. This work describes the recent advances made in integrating strained Si and SiGe channel transistors with high-k/metal-gate stacks for future high performance, low power logic applications.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129080392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
LDMOSFET and SiGe:C HBT integrated in a 0.25 /spl mu/m BiCMOS technology for RF-PA applications LDMOSFET和SiGe:C HBT集成在0.25 /spl mu/m BiCMOS技术中，用于RF-PA应用
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365771
D. Muller, A. Giry, C. Arnaud, C. Arricastres, R. Sommet, B. Szelag, A. Monroy, D. Pache
{"title":"LDMOSFET and SiGe:C HBT integrated in a 0.25 /spl mu/m BiCMOS technology for RF-PA applications","authors":"D. Muller, A. Giry, C. Arnaud, C. Arricastres, R. Sommet, B. Szelag, A. Monroy, D. Pache","doi":"10.1109/BIPOL.2004.1365771","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365771","url":null,"abstract":"An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130340971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers 线性和功率高效的ab类双极射频放大器的最佳偏置和带外输入端
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI: 10.1109/BIPOL.2004.1365741
M. van der Heijden, M. Spirito, M. Pelk, L. D. de Vreede, J. Burghartz
{"title":"On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers","authors":"M. van der Heijden, M. Spirito, M. Pelk, L. D. de Vreede, J. Burghartz","doi":"10.1109/BIPOL.2004.1365741","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365741","url":null,"abstract":"Optimum bias conditions and out-of-band terminations for bipolar devices are investigated in order to rend the best compromise in linearity, efficiency and bandwidth for class-AB power amplifiers. The optimum collector current and baseband impedance for linearity prove to be fixed for a given bipolar technology and device size.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115550130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
"On-glass" process option for BiCMOS technology BiCMOS技术的“On-glass”工艺选项
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-09-12 DOI: 10.1109/BIPOL.2004.1365747
E. Aksen, W. van Noort, D. Bower, N. Bell, R. Dekker, W. de Boer, A. Rodriguez, P. Deixler, R. Havens, P. Magnée
{"title":"\"On-glass\" process option for BiCMOS technology","authors":"E. Aksen, W. van Noort, D. Bower, N. Bell, R. Dekker, W. de Boer, A. Rodriguez, P. Deixler, R. Havens, P. Magnée","doi":"10.1109/BIPOL.2004.1365747","DOIUrl":"https://doi.org/10.1109/BIPOL.2004.1365747","url":null,"abstract":"An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f/sub T//f/sub max/ are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126411997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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