A. Italia, E. Ragonese, L. La Paglia, G. Palmisano
{"title":"一个5 ghz硅双极无线电收发器前端","authors":"A. Italia, E. Ragonese, L. La Paglia, G. Palmisano","doi":"10.1109/BIPOL.2004.1365760","DOIUrl":null,"url":null,"abstract":"A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-f/sub T/ pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 5-GHz silicon bipolar radio transceiver front-end\",\"authors\":\"A. Italia, E. Ragonese, L. La Paglia, G. Palmisano\",\"doi\":\"10.1109/BIPOL.2004.1365760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-f/sub T/ pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 5-GHz silicon bipolar radio transceiver front-end
A 5-GHz radio transceiver front-end chipset, including an image-reject down-converter and a dB-linear variable-gain up-converter, was implemented in a 46-GHz-f/sub T/ pure silicon bipolar technology. The down-converter has a 4-dB noise figure, a 22-dB power gain and a 1-dB input compression point of -20 dBm. It also exhibits an image rejection ratio higher than 60-dB. The up-converter achieves a 1-dB output compression point of 6-dBm, a 13-dB power gain, providing a linear-in-dB gain characteristic with a dynamic range of 30-dB. The overall current consumption is 68-mA from a 3-V supply voltage.
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