Ratio based direct extraction of small-signal parameters for SiGe HBTs

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365765

K. Xia, G. Niu, D. Sheridan, W. Ansley

引用次数: 3

Abstract

A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.

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基于比例的SiGe HBTs小信号参数直接提取

提出了一种新的基于z参数比率的SiGe hbt直接提取方法。包括输入非准静态效应，以实现更准确的噪声建模。在60 GHz的宽偏置电流范围内，获得了与实验数据的极好拟合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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