{"title":"太赫兹f/sub /波段纳米级SiGe HBTs垂直剖面设计与传输时间分析","authors":"Yun Shi, G. Niu","doi":"10.1109/BIPOL.2004.1365783","DOIUrl":null,"url":null,"abstract":"We present a nano-scale SiGe HBT design for above Terahertz f/sub T/. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz/spl middot/V f/sub T//spl times/BV/sub CEO/ is shown in simulations using the graded Ge profile.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz f/sub T/\",\"authors\":\"Yun Shi, G. Niu\",\"doi\":\"10.1109/BIPOL.2004.1365783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a nano-scale SiGe HBT design for above Terahertz f/sub T/. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz/spl middot/V f/sub T//spl times/BV/sub CEO/ is shown in simulations using the graded Ge profile.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz f/sub T/
We present a nano-scale SiGe HBT design for above Terahertz f/sub T/. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz/spl middot/V f/sub T//spl times/BV/sub CEO/ is shown in simulations using the graded Ge profile.
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