LDMOSFET和SiGe:C HBT集成在0.25 /spl mu/m BiCMOS技术中，用于RF-PA应用

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365771

D. Muller, A. Giry, C. Arnaud, C. Arricastres, R. Sommet, B. Szelag, A. Monroy, D. Pache

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引用次数: 11

摘要

本文描述了一个优化的LDMOSFET和一个集成在BiCMOS技术中的用于PA设计的SiGe:C HBT。每个感兴趣的设备，对于PA应用，通过其电气性能-静态，小信号和大信号来强调。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LDMOSFET and SiGe:C HBT integrated in a 0.25 /spl mu/m BiCMOS technology for RF-PA applications

An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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