基于比例的SiGe HBTs小信号参数直接提取

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365765

K. Xia, G. Niu, D. Sheridan, W. Ansley

{"title":"基于比例的SiGe HBTs小信号参数直接提取","authors":"K. Xia, G. Niu, D. Sheridan, W. Ansley","doi":"10.1109/BIPOL.2004.1365765","DOIUrl":null,"url":null,"abstract":"A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ratio based direct extraction of small-signal parameters for SiGe HBTs\",\"authors\":\"K. Xia, G. Niu, D. Sheridan, W. Ansley\",\"doi\":\"10.1109/BIPOL.2004.1365765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种新的基于z参数比率的SiGe hbt直接提取方法。包括输入非准静态效应，以实现更准确的噪声建模。在60 GHz的宽偏置电流范围内，获得了与实验数据的极好拟合。

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Ratio based direct extraction of small-signal parameters for SiGe HBTs

A new direct extraction method, using a set of Z-parameter based ratios, is developed for SiGe HBTs. The input non-quasi-static effect is included to enable more accurate noise modeling. Excellent fitting with experimental data is obtained up to 60 GHz over a wide range of biasing currents.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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