E. Aksen, W. van Noort, D. Bower, N. Bell, R. Dekker, W. de Boer, A. Rodriguez, P. Deixler, R. Havens, P. Magnée
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An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f/sub T//f/sub max/ are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.
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