On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365784

Tianbing Chen, W.-M.L. Kuo, E. Zhao, Q. Liang, Z. Jin, J. Cressler, A. Joseph

引用次数: 7

Abstract

The first comprehensive investigation of the high-temperature operation of SiGe HBTs is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are well-suited for many electronics applications operating at temperatures as high as 300/spl deg/C.

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关于SiGe HBTs在高温(至300/spl度/)电子器件中的适用性

提出了SiGe HBTs高温运行的第一次全面调查，并表明，与流行的观点相反，SiGe HBTs非常适合在高达300/spl度/C的温度下工作的许多电子应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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