{"title":"7.3 ghz, 55%调谐范围发射极退化有源电感压控振荡器","authors":"J. Zhan, J. S. Duster, Kevin T. Kornegay","doi":"10.1109/BIPOL.2004.1365746","DOIUrl":null,"url":null,"abstract":"A 7.3-GHz, 55%-tuning-range active inductor VCO fabricated in an IBM 6HP SiGe BiCMOS process is presented. It occupies an area of 165 /spl mu/m/spl times/335 /spl mu/m and draws 15 mA of DC current from a 3.6 V supply to provide -74 dBc/Hz of phase noise at a 1 MHz offset.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO\",\"authors\":\"J. Zhan, J. S. Duster, Kevin T. Kornegay\",\"doi\":\"10.1109/BIPOL.2004.1365746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 7.3-GHz, 55%-tuning-range active inductor VCO fabricated in an IBM 6HP SiGe BiCMOS process is presented. It occupies an area of 165 /spl mu/m/spl times/335 /spl mu/m and draws 15 mA of DC current from a 3.6 V supply to provide -74 dBc/Hz of phase noise at a 1 MHz offset.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 7.3-GHz, 55% tuning range emitter degenerated active inductor VCO
A 7.3-GHz, 55%-tuning-range active inductor VCO fabricated in an IBM 6HP SiGe BiCMOS process is presented. It occupies an area of 165 /spl mu/m/spl times/335 /spl mu/m and draws 15 mA of DC current from a 3.6 V supply to provide -74 dBc/Hz of phase noise at a 1 MHz offset.
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