High-voltage SiC and GaN power devices

T. Chow
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引用次数: 70

Abstract

Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.
高压SiC和GaN功率器件
宽带隙半导体,特别是SiC和GaN,最近在电力电子应用中引起了很多关注,因为它们的性能预计比硅好100倍以上。本文综述了近年来碳化硅和氮化镓高压功率开关器件的研究进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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