{"title":"高压SiC和GaN功率器件","authors":"T. Chow","doi":"10.1109/BIPOL.2004.1365780","DOIUrl":null,"url":null,"abstract":"Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"70","resultStr":"{\"title\":\"High-voltage SiC and GaN power devices\",\"authors\":\"T. Chow\",\"doi\":\"10.1109/BIPOL.2004.1365780\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"70\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365780\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.
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