器件几何形状对高速ffv双极晶体管直流、交流和SOA的影响

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365807

R. Dutta, T. Krutsick, J. Siket

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引用次数: 0

摘要

详细描述了器件几何形状对功率双极晶体管的lx、AC和SOA性能的影响。定义了适当的归一化到总器件面积的性能指标，从而推荐了一种新的基极发射极几何形状以获得最佳性能。它们的实现显著减少了NPN和PNP的硅面积。

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Influence of device geometry on DC, AC and SOA of high speed ffv bipolar transistors

Detailed characterizations were performed to evaluate the influence of device geometry on the L X , AC and SOA performances of power bipolar transistors. Appropriate performance indices normalized to total device area were defmed, leading to recommendation of a novel baseemitter geometry for optimal performance. Their implementation resulted in significant reduction in silicon area for both NPN and PNP.

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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