L. Lanzerotti, N. Feilchenfeld, D. Coolbaugh, James A. Slinkman, P. Gray, David C. Sheridan, J. Higgins, W. Hodge, M. Gordon, T. Larsen, M. Gautsch, P. Lindgren, R. Murty, J. Rascoe, Kimball M. Watson, T. Stamper, E. Eshun, J. He, K. Downes, R. Rassel, J. Greco, B. Labelle, S. Sweeney, Kenneth J. Stein, R. Bolam, K. Vaed, B. Omer, Alvin J. Joseph, S. S. Onge, J. Dunn
{"title":"低复杂度的0.13 /spl mu/ SiGe BiCMOS技术，适用于无线和混合信号应用","authors":"L. Lanzerotti, N. Feilchenfeld, D. Coolbaugh, James A. Slinkman, P. Gray, David C. Sheridan, J. Higgins, W. Hodge, M. Gordon, T. Larsen, M. Gautsch, P. Lindgren, R. Murty, J. Rascoe, Kimball M. Watson, T. Stamper, E. Eshun, J. He, K. Downes, R. Rassel, J. Greco, B. Labelle, S. Sweeney, Kenneth J. Stein, R. Bolam, K. Vaed, B. Omer, Alvin J. Joseph, S. S. Onge, J. Dunn","doi":"10.1109/BIPOL.2004.1365789","DOIUrl":null,"url":null,"abstract":"We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications\",\"authors\":\"L. Lanzerotti, N. Feilchenfeld, D. Coolbaugh, James A. Slinkman, P. Gray, David C. Sheridan, J. Higgins, W. Hodge, M. Gordon, T. Larsen, M. Gautsch, P. Lindgren, R. Murty, J. Rascoe, Kimball M. Watson, T. Stamper, E. Eshun, J. He, K. Downes, R. Rassel, J. Greco, B. Labelle, S. Sweeney, Kenneth J. Stein, R. Bolam, K. Vaed, B. Omer, Alvin J. Joseph, S. S. Onge, J. Dunn\",\"doi\":\"10.1109/BIPOL.2004.1365789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365789\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications
We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.
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