基于劈基结构的基极-发射极错位测量技术[HBT]

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365738

C. Cismaru, Ching-Hua Li, P. Zampardi

{"title":"基于劈基结构的基极-发射极错位测量技术[HBT]","authors":"C. Cismaru, Ching-Hua Li, P. Zampardi","doi":"10.1109/BIPOL.2004.1365738","DOIUrl":null,"url":null,"abstract":"We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Technique for measuring base-emitter misalignment using split base structure [HBT]\",\"authors\":\"C. Cismaru, Ching-Hua Li, P. Zampardi\",\"doi\":\"10.1109/BIPOL.2004.1365738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365738\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了一种测量纳米分辨率InGaP/GaAs异质结构双极晶体管(HBT)技术发射基错位的电学方法。该方法适用于发射基偏差的在线过程监测，代表了更保守的β -比测量的更好选择。

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Technique for measuring base-emitter misalignment using split base structure [HBT]

We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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