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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)最新文献

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A 1.2V current mirror double balanced mixer with current reusing technique 采用电流复用技术的1.2V电流镜双平衡混频器
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552002
Xiao Shi, Jianhui Wu, Zhilin Liu
{"title":"A 1.2V current mirror double balanced mixer with current reusing technique","authors":"Xiao Shi, Jianhui Wu, Zhilin Liu","doi":"10.1109/ELNANO.2013.6552002","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552002","url":null,"abstract":"This paper presents the design of a double balanced current-mirror mixer with current reusing technique. The proposed mixer is based on high linearity current mirror structure which guarantees a high IIP3. To improve the power efficiency of the current mirror structure, a current reusing technique is used to share the bias current of the transconductance stage and the output stage. Compared with the traditional current mirror mixer, a power decrease of 36% can be achieved. The mixer is designed in 0.13-μm 1P8M RFCMOS process; operating at the frequency of 1GHz. Simulation results indicate a peak conversion gain of 12.6dB, a relatively high IIP3 of 4.0dBm and a moderate NF of 16dB. The whole mixer has a power consumption of 3.84mW under 1.2V supply voltage.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130106335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1.2V wideband CMOS mixer with high conversion gain and low flicker noise 具有高转换增益和低闪烁噪声的1.2V宽带CMOS混频器
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552093
Chao Chen, Jianhui Wu
{"title":"A 1.2V wideband CMOS mixer with high conversion gain and low flicker noise","authors":"Chao Chen, Jianhui Wu","doi":"10.1109/ELNANO.2013.6552093","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552093","url":null,"abstract":"This paper presents the design of a wideband CMOS mixer (frequency convertor) for direct-conversion receivers. The mixer consists of a transconductance stage, a passive switching stage and a current amplifier. The current amplifier with gm-boosted structure realizes a low input resistance. It absorbs the down-converted IF current at the output node of the switching pair and amplifies it through a current mirror. The low noise characteristic of the current amplifier helps to improve the noise performance of the proposed mixer. In order to improve the power efficiency, current-reusing technique is adopted in the transconductance stage. The proposed mixer is designed in 0.13μm RFCMOS process. Simulation results show a 20dB conversion gain, a 10dB SSB noise figure and a 4.5 dBm IIP3 over the wideband operation frequency band from 1GHz to 3GHz while dissipating 2.5mA under a 1.2V supply voltage.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132450715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal resistance of power submicron heterojunction field-effect transistors 功率亚微米异质结场效应晶体管的热阻
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552007
V. Timofeyev, E. Semenovskaya
{"title":"Thermal resistance of power submicron heterojunction field-effect transistors","authors":"V. Timofeyev, E. Semenovskaya","doi":"10.1109/ELNANO.2013.6552007","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552007","url":null,"abstract":"The paper presents a method for thermal resistance calculating of power submicron heterojunction field-effect transistor. Described method establishes dependence of the thermal resistance of the transistor on its thermo- and electrophysical parameters, geometrical size and shape. The results of thermal resistance calculation for submicron transistors are proved by experiment and show good agreement.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121477369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Barrier properties of polymer encapsulation materials for implantable microsystems 可植入微系统用高分子封装材料的阻隔性能
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552075
S. Kirsten, Jakob Wetterling, J. Uhlemann, K. Wolter, Sergej Zigler
{"title":"Barrier properties of polymer encapsulation materials for implantable microsystems","authors":"S. Kirsten, Jakob Wetterling, J. Uhlemann, K. Wolter, Sergej Zigler","doi":"10.1109/ELNANO.2013.6552075","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552075","url":null,"abstract":"Biocompatible polymers utilized for flexible encapsulations of implantable microsystems provide many advantages compared to widely used rigid titanium or ceramic packages. However, polymers alter their properties due to interactions with their environment. As a result the protective function of these materials especially for long-term implants is not reliable. Therefore, we investigated barrier properties against water vapor of silicone and Parylene C membranes. And we combined these polymers to a multi-layer membrane to enhance the protective function of such an encapsulation system. Applying a bonding agent between two polymer layers increases the strength of the sample as well as the barrier properties significantly.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124351306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Nanoparticles of ferromagnetic materials and possibilities of their application in the hyperthermia of malignant tumors 铁磁材料纳米颗粒及其在恶性肿瘤热疗中的应用前景
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552060
A. Belous, S. Solopan, A. Yelenich, L. Bubnovskaya, S. Osinsky
{"title":"Nanoparticles of ferromagnetic materials and possibilities of their application in the hyperthermia of malignant tumors","authors":"A. Belous, S. Solopan, A. Yelenich, L. Bubnovskaya, S. Osinsky","doi":"10.1109/ELNANO.2013.6552060","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552060","url":null,"abstract":"Slightly agglomerated, crystalline nanoparticles of ferromagnetic compounds with spinel and perovskite La<sub>1-x</sub>Sr<sub>x</sub>MnO<sub>3</sub> structure have been synthesized by the sol-gel method, precipitation from glycol solutions and using microemulsion technique. “Core/shell” La<sub>1-x</sub>Sr<sub>x</sub>MnO<sub>3</sub>/SiO<sub>2</sub> structure have been developed. Magnetic properties of the synthesized nanoparticles have been investigated. It was shown that the obtained nanoparticles exhibit superparamagnetic properties. It has been found that the synthesized nanoparticles have promise in hyperthermia of cancer cells.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129546711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Modeling of electronic radiation influence to transistors 电子辐射对晶体管影响的建模
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552069
A. A. Tuyakbayev, M. Baizhumanov, D. A. Tuyakbaev
{"title":"Modeling of electronic radiation influence to transistors","authors":"A. A. Tuyakbayev, M. Baizhumanov, D. A. Tuyakbaev","doi":"10.1109/ELNANO.2013.6552069","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552069","url":null,"abstract":"The paper presents a single-level model to identify the constant of the radiation changes in the lifetime of minority carriers in the base of n-p-n transistors, DLTS spectra base of n-p-n transistors and describes the results.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":" 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120832353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Periodicity assisted scattering and absorption of light by finite layered gratings of silver nanowires 银纳米线有限层状光栅的周期性辅助散射和吸收
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552088
D. Natarov, M. Marciniak, R. Sauleau
{"title":"Periodicity assisted scattering and absorption of light by finite layered gratings of silver nanowires","authors":"D. Natarov, M. Marciniak, R. Sauleau","doi":"10.1109/ELNANO.2013.6552088","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552088","url":null,"abstract":"We consider the two-dimensional (2-D) problem of the H-polarized plane wave scattering by discrete arrays made of finite number of periodically arranged circular cylindrical nanowires. Using the Fourier expansions of the field in local coordinates and addition theorems for cylindrical functions, we perform analytical regularization and obtain a block-type matrix equation. This equation is cast to the Fredholm second-kind form that guarantees, after truncation, the convergence of numerical solution. In computations, we consider the gratings with shifted layers made of silver nanowires in the visible-light range of wavelengths. The scattering and absorption cross-sections and near-field patterns are calculated and the interplay of plasmon and periodicity-induced resonances is studied.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122681764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiarities of multichip micro module frameless design with ball contacts on the flexible board 柔性板上球触点多芯片微模块无框设计的特点
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552038
D. Vertyanov, K. S. Tikhonov, S. Timoshenkov, V. Petrov, G. Blinov
{"title":"Peculiarities of multichip micro module frameless design with ball contacts on the flexible board","authors":"D. Vertyanov, K. S. Tikhonov, S. Timoshenkov, V. Petrov, G. Blinov","doi":"10.1109/ELNANO.2013.6552038","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552038","url":null,"abstract":"New design and technological solution of three-dimensional multi-chip modules has been considered. Installation of bare chips on a flexible board has been done by printed circuit board assembly and external module contacts have performed in the matrix ball pins form. Test program was conducted in order to quantify the limits of the process. Application of flip-chip process to a wide range of customers particularly for 3D packaging has been discussed.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127934697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Timing yield and reliability improvement of carbon nano-tube FET based digital circuits with statistical driven correlation-aware placement 基于统计驱动相关感知布局的碳纳米管场效应管数字电路的时序良率和可靠性提高
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552009
A. Jalali, H. Pedram
{"title":"Timing yield and reliability improvement of carbon nano-tube FET based digital circuits with statistical driven correlation-aware placement","authors":"A. Jalali, H. Pedram","doi":"10.1109/ELNANO.2013.6552009","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552009","url":null,"abstract":"Carbon Nano-tube Field Effect Transistor (CNFET) is one of the most promising successors of CMOS technology because of its superb electrical features. Although these features are proper for implementing in various practical circuits, CNFET-based circuits will encounter enormous fabrication problems due to their size. Two of the most challenging problems are timing yield and reliability reduction. Consequently methods for improving robustness of CNFET-based circuits should be conducted. Considering these problems, in this paper, the statistical model of reliability and timing yield of CNFET-based circuits is presented and then we propose a statistical driven correlation-aware placement for CNFET-based gates. We illustrate that our placement engine improves the reliability and timing yield of various circuits. Following these observations, in our method, a statistical approach is conducted to get optimum timing yield of register-to-register path in a sequential circuit. Subsequently, experimental results show improvement of about 19% in timing yield and 17% in reliability of some ISCAS89 circuits.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115235197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of resonant-tunneling diode with uniform and graded emitter 均匀梯度发射极谐振隧道二极管的建模
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552012
A. Fediai, V. Moskaliuk
{"title":"Modeling of resonant-tunneling diode with uniform and graded emitter","authors":"A. Fediai, V. Moskaliuk","doi":"10.1109/ELNANO.2013.6552012","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552012","url":null,"abstract":"Envelope function approach for resonant-tunneling diode (RTD) modeling is developed further. We have found a way of simultaneous treatment of scattering in the quantum well (QW) and incoherent transport, yielding better agreement with experimental I-V characteristics of RTDs with graded and uniform emitter. We also included all our previously developed improvements to the model to obtain maximum adequacy. Since I-V characteristic's shape is affected by numerous factors, we describe our vision on significance of each of them, based on the fulfilled verification.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127498762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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