{"title":"A 1.2V wideband CMOS mixer with high conversion gain and low flicker noise","authors":"Chao Chen, Jianhui Wu","doi":"10.1109/ELNANO.2013.6552093","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a wideband CMOS mixer (frequency convertor) for direct-conversion receivers. The mixer consists of a transconductance stage, a passive switching stage and a current amplifier. The current amplifier with gm-boosted structure realizes a low input resistance. It absorbs the down-converted IF current at the output node of the switching pair and amplifies it through a current mirror. The low noise characteristic of the current amplifier helps to improve the noise performance of the proposed mixer. In order to improve the power efficiency, current-reusing technique is adopted in the transconductance stage. The proposed mixer is designed in 0.13μm RFCMOS process. Simulation results show a 20dB conversion gain, a 10dB SSB noise figure and a 4.5 dBm IIP3 over the wideband operation frequency band from 1GHz to 3GHz while dissipating 2.5mA under a 1.2V supply voltage.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the design of a wideband CMOS mixer (frequency convertor) for direct-conversion receivers. The mixer consists of a transconductance stage, a passive switching stage and a current amplifier. The current amplifier with gm-boosted structure realizes a low input resistance. It absorbs the down-converted IF current at the output node of the switching pair and amplifies it through a current mirror. The low noise characteristic of the current amplifier helps to improve the noise performance of the proposed mixer. In order to improve the power efficiency, current-reusing technique is adopted in the transconductance stage. The proposed mixer is designed in 0.13μm RFCMOS process. Simulation results show a 20dB conversion gain, a 10dB SSB noise figure and a 4.5 dBm IIP3 over the wideband operation frequency band from 1GHz to 3GHz while dissipating 2.5mA under a 1.2V supply voltage.