具有高转换增益和低闪烁噪声的1.2V宽带CMOS混频器

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552093

Chao Chen, Jianhui Wu

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引用次数: 3

摘要

本文设计了一种用于直接转换接收机的宽带CMOS混频器(频率转换器)。混频器由跨导级、无源开关级和电流放大器组成。采用gm升压结构的电流放大器实现了低输入电阻。它吸收开关对输出节点的下变频中频电流，并通过电流镜将其放大。电流放大器的低噪声特性有助于改善所提出的混频器的噪声性能。为了提高功率效率，在跨导阶段采用了电流复用技术。该混合器采用0.13μm RFCMOS工艺设计。仿真结果表明，在1.2V电源电压下，在1GHz至3GHz的宽带工作频带上，转换增益为20dB, SSB噪声系数为10dB, IIP3为4.5 dBm，功耗为2.5mA。

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A 1.2V wideband CMOS mixer with high conversion gain and low flicker noise

This paper presents the design of a wideband CMOS mixer (frequency convertor) for direct-conversion receivers. The mixer consists of a transconductance stage, a passive switching stage and a current amplifier. The current amplifier with gm-boosted structure realizes a low input resistance. It absorbs the down-converted IF current at the output node of the switching pair and amplifies it through a current mirror. The low noise characteristic of the current amplifier helps to improve the noise performance of the proposed mixer. In order to improve the power efficiency, current-reusing technique is adopted in the transconductance stage. The proposed mixer is designed in 0.13μm RFCMOS process. Simulation results show a 20dB conversion gain, a 10dB SSB noise figure and a 4.5 dBm IIP3 over the wideband operation frequency band from 1GHz to 3GHz while dissipating 2.5mA under a 1.2V supply voltage.

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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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